PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

www.DataSheet4U.com PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 – MARCH 94 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits FXTA92 B C REFER TO MPSA92 FOR GRAPHS E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -300 -300 -5 -500 680 -55 to +175 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -300 -300 -5 -0.25 -0.1 -0.5 -0.9 25 40 25 50 6 3-65 MHz pF TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=-100µA, IE=0 IC=-1mA, IB=0* IE=-10µA, IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA IC=-1mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-30mA, VCE=-10V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo