NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

www.DataSheet4U.com NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 1 – SEPT 93 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits FXTA42 B C E REFER TO MPSA42 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE 300 300 6 500 680 -55 to +175 UNIT V V V mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 300 300 6 0.1 0.1 0.5 0.9 25 40 40 50 6 3-64 MHz pF TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=100µA, IE=0 IC=1mA, IB=0* IE=100µA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo