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PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 1 FEB 94 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Ptot= 1 Watt APPLICATIONS * Lamp, relay or solenoid drivers * Audio circuits * Replacement of TO126 and TO220 parts REFER TO ZTX751 FOR GRAPHS
FXT751
B C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -80 -60 -5 -6 -2 1
E-Line TO92 Compatible VALUE UNIT V V V A A W °C
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 70 100 80 40 100 -0.15 -0.28 -0.90 -0.8 200 200 170 150 140 30 3-57 MIN. -80 -60 -5 -0.1 -10 -0.1 -0.3 -0.5 -1.25 -1.0 300 MHz pF TYP. MAX. UNIT V V V
µA µA µA
CONDITIONS. IC=-100µA, IE=0 IC=-10mA, IB=0* IE=-100µA, IC=0 VCB=-60V, IE=0 VCB=-60V, Tamb=100°C VEB=-4V, IC=0 IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-50mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V, f=1MHz
V V V V
fT Cobo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
