PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 – FEB 94 FEATURES * 120 Volt VCEO * Gain of 3K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 darlingtons REFER TO ZTX705 FOR GRAPHS www.DataSheet4U.com FXT705 B C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -140 -120 -10 -4 -1 1 E-Line TO92 Compatible VALUE UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) 3k 3k 3k 2k 160 3-55 MIN. -140 -120 -10 -0.1 -10 -10 -0.1 -1.3 -2.5 -1.8 -1.7 TYP. MAX. UNIT V V V µA µA µA µA CONDITIONS. IC=-100µA, IE=0 IC=-10mA, IB=0* IE=-100µA, IC=0 VCB=-120V, IE=0 VCB=-120V, Tamb=100°C VCES=-80V VEB=-8V IC=-1A, IB=-1mA* IC=-2A, IB=-2mA* IC=-1A, IB=-10mA* IC=-1A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* V V V V Static Forward hFE Current Transfer Ratio Transition Frequency fT 30k MHz IC=-100mA, VCE=-10V f=20MHz