NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 – MAY 94 FEATURES * 45 Volt VCEO * Gain of 400 at IC=1 Amp * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren Drivers * Battery powered circuits * Motor drivers REFER TO ZTX690B FOR GRAPHS www.DataSheet4U.com FXT690B B C E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg VALUE 45 45 5 6 2 1.5 1 5.7 -55 to +200 UNIT V V V A A W W mW/°C °C Operating and Storage Temperature Range *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 500 400 150 3-52 MIN. 45 45 5 0.1 0.1 0.1 0.5 0.9 0.9 TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=100µA IC=10mA* IE=100µA VCB=35V VEB=4V IC=0.1A, IB=0.5mA* IC=1A, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* V V V V FXT690B ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Transition Frequency Input Capacitance Output Capacitance Switching Times SYMBOL fT Cibo Cobo ton toff MIN. 150 200 16 33 1300 TYP. MAX. UNIT MHz pF pF ns ns CONDITIONS. IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500mA, IB!=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2† Rth(j-case) MAX. 175 116 70 UNIT °C/W °C/W °C/W † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissipation - (Watts) Thermal Resistance (°C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-53