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NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 1 FEB 94 FEATURES * 300 Volt VCEO * 0.5 Amps continuous current * Ptot= 1 Watt APPLICATIONS * Telephone dialler circuits * Video output drivers REFER TO ZTX657 FOR GRAPHS
FXT657
B C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
E-Line TO92 Compatible VALUE 300 300 5 1 0.5 1 -55 to +200 UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 300 300 5 100 100 0.5 1 1 40 50 30 20 MHz pF TYP. MAX. UNIT V V V nA nA V V V CONDITIONS. IC=100µ A, IE=0 IC=10mA, , IB=0* IE=100µ A, IC=0 VCB=200V, IE=0 VEB=3V, IC=0 IC=100mA, IB=10mA* IC=100mA, IB=10mA* IC=100mA, VCE=5V* IC=10mA, VCE=5V* IC=100mA, VCE=5V* IC=10mA, VCE=20V f=20MHz VCB=20V, f=1MHz
Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on)
Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-50
