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FTP18N06 Datasheet

N-Channel MOSFET


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FTP18N06
N-Channel MOSFET
Applications:
• DC Motor Control
• UPS
• Class D Amplifier
Pb Lead Free Package and Finish
VDSS
60V
RDS(ON) (Max.)
18 m
ID
59 A
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
PACKAGE
FTP18N06
TO-220
BRAND
FTP18N06
D
G DS
TO-220
Not to Scale
G
S
Absolute Maximum Ratings Tc=25 oC unless otherwise specified
Symbol
Parameter
Maximum
Units
VDSS
ID
ID@ 100 oC
IDM
PD
VGS
EAS
IAS
dv/dt
TL
TPKG
TJ and TSTG
Drain-to-Source Voltage
(NOTE *1)
Continuous Drain Current
.
Continuous Drain Current
Pulsed DrainCurrent, VGS@ 10V
Power Dissipation
(NOTE *2)
Derating Factor above 25 oC
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=500 µH, ID=21.5A
Pulsed Avalanche Engergy
Peak Diode Recovery dv/dt
(NOTE *3)
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
60
59
Figure 3
Figure 6
150
1.0
±20
115
Figure 8
3.0
300
260
-55 to 175
V
A
W
W/ oC
V
mJ
V/ ns
oC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Min. Typ. Max.
-- -- 1.0
-- -- 62
Units
oC/W
Test Conditions
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1 cubic foot chamber, free air
©2006 InPower Semiconductor Co., Ltd.
FTP18N06 REV. B Oct. 2006
Page 1

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OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
Drain-to-Source Breakdown Voltage 60
--
BVDSS /TJ
BreakdownVoltage Temperature
Coefficient, Figure 11
-- 0.069
Max.
--
--
IDSS
Drain-to-Source Leakage Current
-- -- 25
-- -- 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 100
-- -- -100
Units
V
V/ oC
µA
nA
Test Conditions
VGS=0V, ID=250µA
Reference to 25 oC,
ID=250 µA
VDS=60V, VGS=0V
VDS=48V, VGS=0V
TJ=150oC
VGS=+20 V
VGS=-20 V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
Static Drain-to-Source On-Resistance,
Figure 9 and 10
--
16
VGS(TH)
Gate Threshold Voltage, Figure 12
2.0 --
gfs Forward Transconductance
-- 36
Max.
18
4.0
--
Units
m
V
S
Test Conditions
VGS=10V, ID=36A
(NOTE *4)
VDS=VGS, ID=250µA
VDS=15V, ID=59A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max.
Units
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 1460 --
-- 420 --
-- 90 --
pF
Qg Total Gate Charge
-- 39.7 59.6
Qgs Gate-to-Source Charge
-- 8.4 12.6
nC
Qgd
Gate-to-Drain (“Miller”) Charge
-- 9.2 13.8
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDS=30V
ID=59A
VGS=10 V
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max.
Units
Test Conditions
-- 9.5 --
-- 61 --
-- 72 --
-- 87 --
ns
VDD=30 V
ID=59A
VGS=10 V
RG=9.1
©2006 InPower Semiconductor Co., Ltd.
FTP18N06 REV. B Oct. 2006
Page 2 of 9
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Source-Drain Diode Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
IS
Continuous Source Current (Body Diode) --
--
59
ISM
Pulsed Source Current (Body Diode)
-- --
236
VSD Diode Forward Voltage
-- --
1.5
trr Reverse Recovery Time
-- 57
86
Qrr Reverse Recovery Charge
-- 90
135
Units
A
A
V
ns
nC
Test Conditions
Integral pn-diode
in MOSFET
IS=59A, VGS=0V
VGS=0 V
IF=59A, di/dt=100 A/µs
Notes:
*1. TJ = +25 oC to +175 oC
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 59A, di/dt < 100 A/µs, VDD < BVDSS, TJ=+175oC
*4. Pulse width < 380µs; duty cycle < 2%
©2006 InPower Semiconductor Co., Ltd.
FTP18N06 REV. B Oct. 2006
Page 3 of 9
Page 3
Part Number FTP18N06
Manufactur IPS
Description N-Channel MOSFET
Total Page 9 Pages
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