Smart Power Module

FSAB20PH60 Smart Power Module for Partial Switching Converter September 2006 FSAB20PH60 Smart Power Module for Partial Switching Converter Features • Very low thermal resistance due to using DBC • 600V-20A single-phase rectifier bridge diode including two IGBTs for partial switching converter • Integrated IC for gate driving and protection • Divided negative dc-link terminals for current sensing • Isolation rating of 2500Vrms/min. General Description FSAB20PH60 is an advanced smart power module of PSC(Partial Switching Converter) that Fairchild has newly developed and designed mainly targeting low-power application especially for an air conditioners. It combines optimized circuit protection and drive IC matched to IGBTs. System reliability is further enhanced by the integrated under-voltage lock-out and shortcircuit protection function. Applications • AC 187V ~ 276V single-phase partial-switching converter of air-conditioner Top View 44mm Bottom View 26.8mm Figure 1. ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter Integrated Power Functions • 600V-20A rectifiers for single-phase ac input with IGBT switches for operation of partial switching converter Integrated Drive, Protection and System Control Functions • For IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a UV fault (Low-side supply) • Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input • Built-in thermistor: Over-temperature monitoring Pin Configuration (1) VCC (2) COM (3) NC (4) IN(R) (5) IN(S) (6) VFO (7) CFOD (8) CSC (9) NC (10) NC (11) NC (12) NC (13) NC (14) NC (15) NC (16) NC (17) NC (18) NC (19) RTH (20) VTH (21) ND (22) NR (23) NS (24) NC Case Temperature (TC) Detecting Point (25) R (26) S DBC Substrate (27) PR Figure 2. 2 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Pin Name VCC COM NC IN(R) IN(S) VFO CFOD CSC NC NC NC NC NC NC NC NC NC NC R(TH) V(TH) ND NR NS NC R S PR Common Bias Voltage for IC Common Supply Ground Dummy Pin Signal Input for R-phase IGBT Signal Input for S-phase IGBT Fault Output Pin Description Capacitor for Fault Output Duration Time Selection Capacitor (Low-pass Filter) for Short-Current Detection Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Dummy Pin Series Resistor for the Use of Thermistor (Temperature Detection) Thermistor Bias Voltage Negative DC–Link of Rectifier Diode Negative DC–Link of R-phase IGBT Negative DC–Link of S-phase IGBT Dummy Pin AC Input for R Phase AC Input for S Phase Positive DC–Link Output Internal Equivalent Circuit and Input/Output Pins (20) VTH (19) RTH (8) CSC (7) CFOD (6) VFO (5) IN(S) (4) IN(R) (2) COM (1) VCC NTC Thermistor D1 D2 (27) PR (26) S (25) R CSC CFOD VFO IN(S) IN(R) COM VCC OUT(R) OUT(S) Q1 D3 Q2 D4 (21) ND (23) NS (22) NR Note: The low-side is composed of two IGBTs including rectifying diodes for each IGBT and one control IC which has gate driving, current sensing and protection functions. The highside is composed of two rectifying diodes without gate driving IC. Figure 3. 3 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Absolute Maximum Ratings (TJ = 25°C, Converter Part Symbol Vi Vi(Surge) VPN VPN(surge) VCES VRRM Ii Ii TJ Note: Unless Otherwise Specified) Parameter Input Supply Voltage Input Supply Voltage (Surge) Output Voltage Output Voltage (Surge) Collector-emitter Voltage Repetitive Peak Reverse Voltage Input Current (100% Load) Input Current (130% Load) Operating Junction Temperature Conditions Applied between R-S Applied between R-S Applied between P-N Applied between P-N IGBT Diode TC ≤ 90°C, VO = 280V, fPWM = 60Hz TC ≤ 90°C, VO = 280V, fPWM = 60Hz (Note 1) Rating 276 500 400 500 600 600 11 14 -20 ~ 125 Units V V V V V V ARMS ARMS °C 1. The maximum junction temperature rating of the power chips integrated within the module is 150 °C(@TC ≤ 100°C). However, to insure safe operation, the average junction temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C) Control Part Symbol VCC VIN VFO IFO VSC Parameter Control Supply Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Conditions Applied between VCC - COM Applied between IN(R), IN(S) - COM Applied between VFO - COM Sink Current at VFO Pin Rating 20 -0.3~VCC+0.3 -0.3~VCC+0.3 5 -0.3~VCC+0.3 Units V V V mA V Current Sensing Input Voltage Applied between CSC - COM Total System Symbol TC TSTG VISO Parameter Module Case Operation Temperature Storage Temperature Isolation Voltage Conditions -20°C < TJ < 125°C, See Fig.2 60Hz, Sinusoidal, AC 1 minute, Connection Pins to DBC Rating -20 ~ 100 -40 ~ 125 2500 Units °C °C Vrms 4 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Absolute Maximum Ratings Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Note: 2. For the measurement point of case temperature(TC), please refer to Figure 2. Parameter Junction to Case Thermal Resistance Conditions Each IGBT under Operating Condition Each Diode under Operating Condition Min. - Typ. - Max. 2.8 2.6 Units °C/W °C/W Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Main Circuit Part Symbol VCE(SAT) VFM tON tC(ON) tOFF tC(OFF) trr ICES IR Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Item Collector-Emitter Saturation Voltage Diode Forward Voltage Switching Times Conditions VCC = VBS =15V VIN = 5V VIN = 0V IC = 6.5A, TJ = 25°C IC = 20A, TJ = 25°C Min. - Typ. 2.1 1.1 0.48 0.85 0.56 0.10 1.35 - Max. 2.6 1.5 250 250 Units V V µs µs µs µs µs µA µA VPN = 300V, VCC = VBS = 15V IC = 6.5A VIN = 0V ↔ 5V, Inductive Load (Note 3) Collector - Emitter Leakage Current Diode Leakage Current VCE = VCES VR = VRRM - 100% IC 120% IC trr V CE IC IC V CE V IN tON tC(ON) V IN(ON) 10% IC 90% IC 10% V CE V IN tOFF V IN(OFF) 10% V CE tC(OFF) 10% IC Figure 4. Switching Time Definition 5 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified) Control Part Symbol IQCCL VFOH VFOL VSC(ref) UVCCD UVCCR tFOD VIN(ON) VIN(OFF) RTH Short Circuit Trip Level Supply Circuit UnderVoltage Protection Fault-out Pulse Width ON Threshold Voltage OFF Threshold Voltage Resistance of Thermistor @ TC = 25°C (Note Fig. 10) @ TC = 80°C (Note Fig. 10) Note: Parameter Quiescent VCC Supply Current Fault Output Voltage VCC = 15V IN(L) = 0V Conditions VCC(L) - COM Min. 4.5 0.45 10.7 11.2 1.0 3.0 - Typ. 0.5 11.9 12.4 1.8 50 5.76 Max. 23 0.8 0.55 13.0 13.2 0.8 - Units mA V V V V V ms V V kΩ kΩ VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up VCC = 15V (Note 4) Detection Level Reset Level CFOD = 33nF (Note 5) Applied between IN(R), IN(S) - COM 4. Over current protection is functioning only for the low-side IGBT. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F] Recommended Operating Conditions Symbol Vi VPN VCC fPWM Note: Parameter Input Supply Voltage Output Voltage Control Supply Voltage PWM Input Signal Condition Applied between R - S Applied between P - N Applied between VCC - COM TC ≤ 100°C, TJ ≤ 125°C, Per IGBT (Note 6) Value Min. 187 13.5 - Typ. 280 15 60 Max. 276 400 16.5 - Units Vrms V V Hz 6. Regarding the switching method of FSAB20PH60, it follows the control method of the typical partial-switching power factor correction circuit as shown in Figure 5. 6 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter D1 Lac D2 L o a d (a) Vac IS Cdc Input Signal 1.5 Q , D 2 3 1 ON 0.5 0 D 2 , D3 ON 2 4 6 8 10 Q1 , D 4 ON D 1 , D4 ON 12 14 16 18 20 Q1 D3 Q2 D4 Rsh -0.5 0 20 10 IS (A) 0 -10 -20 0 20 10 IQ(A) 0 Input Current (b) L o a d 2 4 6 8 10 12 14 Q1 ON 16 18 20 IGBT Current -10 -20 0 20 L o a d Q2 ON 2 4 6 8 10 12 14 16 18 20 10 ID(A) 0 -10 -20 0 Diode Current D 1 ,D 4 ON D2 , D 3 ON 2 4 6 8 10 12 Time(ms) 14 16 18 20 (c) Note: Depending on the polarity of input voltage Vac, Q1 or Q2 is turned on at the zero crossing point of input voltage, and turned off considering the output power and distortion of input current. Each IGBT turns on with zero current with the utility frequency, 50 or 60Hz. Figure 5. PWM Example of FSAB20PH60 7 FSAB20PH60 Rev. A www.fairchildsemi.com FSAB20PH60 Smart Power Module for Partial Switching Converter Mechanical Characteristics and Ratings Parameter Mounting Torque Heatsink Flatness Weight Mounting Screw: M3 Conditions Recommended 0.62Nm Note Fig. 6 Limits Min. 0.51 0 - Typ. 0.62 15.00 Max. 0.72 120 - Units N•m um g (+) (+) (+) Figure 6. Flatness Measurement Position 8 www.fairchildsemi.com FSAB20PH60 Rev. A FSAB20PH60 Smart Power Module for Partial Switching Converter Time Charts of SPMs Protective Function Input Signal Protection Circuit State UV CCR RESET SET RESET Control Supply Voltage a1 UV CCD a3 a6 a2 a4 a7 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under voltage detection (UVCCD). a4 : IGBT