Power Switch

www.DataSheet4U.com www.fairchildsemi.com FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Fairchild Power Switch(SPS) Features • • • • • • • • • • • • • • • Wide Operating Frequency Range Up to 150Khz Lowest Cost SMPS Solution Lowest External Components Low Start-up Current (max:170uA) Low Operating Current (max:15mA) Internal High Voltage SenseFET Built-in Auto-Restart Circuit Over Voltage Protection (Auto Restart Mode) Over Load Protection (Auto Restart Mode) Over Current Protection With Latch Mode Internal Thermal Protection With Latch Mode Pulse By Pulse Over Current Limiting Internal Burst Mode Controller for Stand-by Mode Under Voltage Lockout With Hysteresis External Sync. Terminal TO-3P-5L 1 TO-220F-5L 1 1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync. Internal Block Diagram 3 Vpp=5.8/7.2V 1 - OSC SYNC Burst Mode Coltroller VFB VREF Internal Bias Vref 5 + + UVLO + + S R Roff PWM _ QB Vth=1V Ron VCC Vth=11/12V 4 2.5R Ifb R + Vfb Offset Idelay VREF VCC Rsense + Vth=7.5V VCC OLP S Uvlo Reset (VCC=9V) OCL Filter (130nsec) + Vth=1V 2 + - OVP Q Q S R Power-on Reset (VCC=6.5V) TSD (Tj=160℃) R Vth=30V Rev.1.0.1 ©2001 Fairchild Semiconductor Corporation FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol BVPKG VD,MAX VDGR VGS IDM ID ID IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Total Power Dissipation Derating Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. TJ TA TSTG Value FS6S0965RT 650 650 ±30 36 9 7.2 25(950) 35 -0.3 to VCC -0.3 to 10 FS6S0965RT FS6S0965R FS6S0965RT FS6S0965R +160 -25 to +85 -55 to +150 48 170 0.385 1.33 3500 Unit V V V V ADC ADC ADC A(mJ) V V V W W / °C °C °C °C FS6S0965RT/FS6S0965R Drain to PKG Breakdown Voltage Maximum Drain Voltage Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed(1) Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanch Current(Energy (2)) Maximum Supply Voltage Input Voltage Range FS6S1265R Maximum Drain Voltage Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) VD,MAX VDGR VGS IDM ID ID (2) 650 650 ±30 48 12 8.4 30(950) 35 -0.3 to VCC -0.3 to 10 240 1.92 +160 -25 to +85 -55 to +150 V V V ADC ADC ADC A(mJ) V V V W W / °C °C °C °C Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanch Current(Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. ) IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Derating TJ TA TSTG 2 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Absolute Maximum Ratings (Continued) (Ta=25°C, unless otherwise specified) Characteristic Symbol VD,MAX VDGR VGS IDM ID ID (2) Value 650 650 ±30 60 15 12.0 37(--) 35 -0.3 to VCC -0.3 to 10 280 2.22 +160 -25 to +85 -55 to +150 Unit V V V ADC ADC ADC A(mJ) V V V W W / °C °C °C °C FS6S15658R Maximum Drain Voltage Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (Tc = 25°C) Continuous Drain Current (Tc = 100°C) Single Pulsed Avalanch Current(Energy Maximum Supply Voltage Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. ) IAS(EAS) VCC,MAX VFB VSS PD (Watt H/S) Derating TJ TA TSTG Notes : 1. Repetitive rating : Pulse width limited by maximum junction temperature 2. L = 10mH, VDD =50V, RG = 27Ω, starting Tj = 25°C 3. L = 13uH, starting Tj = 25°C 3 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (SFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) VGS=0V, VDS=25V, f = 1MHz Conditions VGS=0V, ID=50µA VDS=Max., Rating, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) Forward transconductance(1) Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge VDS=0.8Max., Rating, VGS=0V, TC=125°C VGS=10V, ID=4.5A VDS=50V, ID=4.5A Min. 650 Typ. 1.1 1300 135 25 25 75 130 70 45 8 22 Max. 200 300 1.2 nC nS pF Unit V µA µA Ω S FS6S0965RT/FS6S0965R Drain-Source Breakdown Voltage FS6S1265R Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge (1) BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VGS=0V, ID=50µA VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125°C VGS=10V, ID=4.5A VDS=50V, ID=4.5A VGS=0V, VDS=25V, f = 1MHz VDD=0.5BVDSS, ID=12.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=12.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) 650 - 0.7 1820 185 32 38 120 200 100 60 10 30 200 300 0.9 - V µA µA Ω S pF nS nC 4 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (SFET Part; Continued) (Ta = 25°C unless otherwise specified) Parameter Symbol BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDD=0.5BVDSS, ID=15.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=15.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) VGS=0V, VDS=25V, f = 1MHz Conditions VGS=0V, ID=50µA VDS=Max., Rating, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On Resistance (1) Forward transconductance(1) Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge VDS=0.8Max., Rating, VGS=0V, TC=125°C VGS=10V, ID=4.5A VDS=50V, ID=4.5A Min. 650 Typ. 0.5 2590 270 50 50 155 270 125 90 15 45 Max. 200 300 0.65 nC nS pF Unit V µA µA Ω S FS6S15658R Drain-Source Breakdown Voltage Note: (1) Pulse Test : Pulse width ≤300uS, Duty Cycle ≤ 2 % 1 (2) S = --R 5 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (CONTROL Part) (VCC=16V, Tamb = 25°C unless otherwise specified) Parameter UVLO SECTION Start Threshold Voltage Stop Threshold Voltage OSCILLATOR SECTION Initial Frequency Voltage Stability Temperature Stability (Note2) Maximum Duty Cycle Minimum Duty Cycle FEEDBACK SECTION Feedback Source Current Shutdown Feedback Voltage Shutdown Delay Current SYNC. & SOFTSTART SECTION Softstart Voltage Softstart Current Sync High Threshold Voltage(Note3) Sync Low Threshold Voltage(Note3) BURST MODE SECTION Burst Mode Low Threshold Voltage Burst Mode High Threshold Voltage Burst Mode Enable Feedback Voltage Burst Mode Peak Current Limit(Note4) Burst Mode Freqency VBURL VBURH VBEN IBURPK FBUR VFB=0V VFB=0V VCC=10.5V VCC=10.5V , VFB=0V VCC=10.5V , VFB=0V FS6S0965R Peak Current Limit (Note4) PROTECTION SECTION Over Voltage Protcetion Over Current Latch voltage(Note3) Thermal Shutdown Tempature(Note2) TOTAL DEVICE SECTION Start Up Current Operating Supply Current(Note1) ISTART IOP IOP(MIN) IOP(MAX) VFB=GND, VCC=14V VFB=GND, VCC=16V VFB=GND, VCC=12V VFB=GND, VCC=30V 10 15 mA 0.1 0.17 mA VOVP VOCL TSD VCC ≥ 27V 27 0.9 140 30 1.0 160 33 1.1 V V °C IOVER FS6S1265R FS6S15658R 10.4 11.4 0.7 0.6 40 5.28 7.04 7.04 11.0 12.0 1.0 0.85 50 6.0 8.0 8.0 11.6 12.6 1.3 1.1 60 6.72 8.96 8.96 A V V V A kHz VSS ISS VSYNCH VSYNCL VFB=2V VSS=0V VCC=16V , VFB=5V VCC=16V , VFB=5V 4.7 0.8 5.0 1.0 7.2 5.8 5.3 1.2 V mA V V IFB VSD IDELAY VFB=GND VFB ≥ 6.9V VFB=5V 0.7 6.9 1.6 0.9 7.5 2.0 1.1 8.1 2.4 mA V FOSC FSTABLE ∆FOSC DMAX DMIN 12V ≤ VCC ≤ 23V -25°C ≤ Τa≤ 85°C 22 0 0 92 25 1 ±5 95 28 3 ±10 98 0 kHz % % % % VSTART VSTOP VFB=GND VFB=GND 14 8 15 9 16 10 V V Symbol Conditions Min. Typ. Max. Unit µA CURRENT LIMIT(SELF-PROTECTION)SECTION Note: 1. These parameters is the Current Flowing in the Control IC. 2. These parameters, although guaranteed, are not 100% tested in production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor Current. 6 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Typical Performance Characteristics 0.15 0.12 0.09 [mA] Istart 10.2 10.0 9.8 9.6 [mA] Iop 0.06 9.4 0.03 0.00 -25 0 25 50 Temp 75 100 125 150 9.2 9.0 -25 0 25 50 Temp 75 100 125 150 Figure 1. Start Up Current vs. Temp. Figure 2. Operating Supply Current vs. Temp. 16.0 15.6 15.2 [V] Vstart 9.10 9.06 9.02 [V] Vstop 14.8 8.98 14.4 14.0 13.6 -25 0 25 50 Temp 75 100 125 150 8.94 8.90 -25 0 25 50 Temp 75 100 125 150 Figure 3. Start Threshold Voltage vs. Temp. [kHz] Fosc Figure 4. Stop Threshold Voltage vs. Temp. 26.0 25.2 24.4 23.6 22.8 22.0 -25 96.0 95.6 95.2 94.8 94.4 94.0 [%] Dmax 0 25 50 Temp 75 100 125 150 -25 0 25 50 Temp 75 100 125 150 Figure 5. Initial Frequency vs. Temp. Figure 6. Maximum Duty vs. Temp. 7 FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Typical Performance Characteristics (Continued) [V] 0.50 Voff 1.05 1.00 0.95 0.90 0.85 [mA] Ifb 0.40 0.30 0.20 0.80 0.10 -25 0 25 50 Temp 75 100 125 150 0.75 -25 0 25 50 Temp 75 100 125 150 Figure 7. Feedback Offset Voltage vs. Temp. [uA