HIGH - SPEED SWITCJING USE

www.DataSheet4U.com MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET FS18KM-9A FS18KM-9A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS18KM-9A OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 ➀➁➂ ➁ 2.6 ± 0.2 G 10V DRIVE G VDSS ............................................................................... 450V G rDS (ON) (MAX) .............................................................. 0.30Ω G ID ......................................................................................... 18A ➀ ➀ GATE ➁ DRAIN ➂ SOURCE ➂ TO-220FN APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 200µH VGS = 0V VDS = 0V Conditions Ratings 450 ±30 18 54 18 40 –55 ~ +150 –55 ~ +150 4.5 ± 0.2 Unit V V A A A W °C °C V g Sep. 2001 AC for 1minute, Terminal to case Typical value 2000 2.0 MITSUBISHI Nch POWER MOSFET FS18KM-9A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 9A, VGS = 10V ID = 9A, VGS = 10V ID = 9A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 450 ±30 — — 2.5 — — 10.8 — — — — — — — — — Typ. — — — — 3.0 0.26 2.34 18.0 2350 260 50 35 55 310 70 1.5 — Max. — — ±10 1 3.5 0.30 2.70 — — — — — — — — 2.0 3.12 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 9A, VGS = 10V, RGEN = RGS = 50Ω IS = 9A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 POWER DISSIPATION PD (W) 40 DRAIN CURRENT ID (A) tw = 10µs 100µs 1ms 10ms 101 7 5 3 2 30 20 100 7 5 3 2 DC TC = 25°C Single Pulse 23 5 7101 23 5 7102 23 5 7103 10 0 10–1 0 50 100 150 200 7 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50 VGS = 20V,10V,8V 6V OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V,10V,8V,6V 5V DRAIN CURRENT ID (A) 40 DRAIN CURRENT ID (A) TC = 25°C Pulse Test 16 TC = 25°C Pulse Test 30 5V 12 20 8 10 PD = 4 0W 4 PD = 40W 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS18KM-9A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 1.0 TC = 25°C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) 32 0.8 24 0.6 VGS = 10V 16 ID = 35A 0.4 20V 8 25A 18A 9A 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 102 7 5 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 32 3 2 TC = 25°C 75°C 125°C 24 101 7 5 3 2 VDS = 10V Pulse Test 16 TC = 25°C VDS = 10V Pulse Test 8 0 0 4 8 12 16 20 100 0 10 2 3 5 7 101 2 3 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 103 7 5 3 2 102 7 5 3 2 Tch = 25°C VGS = 0V f = 1MHz 23 5 7 100 2 3 Ciss 3 2 td(off) 102 7 5 3 2 td(on) tf tr Tch = 25°C VGS = 10V VDD = 200V RGEN = RGS = 50Ω 2 3 5 7 102 Coss Crss 5 7 101 2 3 5 7 102 2 3 101 100 2 3 5 7 101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS18KM-9A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 GATE-SOURCE VOLTAGE VGS (V) 20 SOURCE CURRENT IS (A) 400V 16 200V VDS = 100V 32 TC = 125°C 75°C 12 24 25°C 8 16 4 TCh = 25°C ID = 18A 8 VGS = 0V Pulse Test 0 0 40 80 120 160 200 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 5.0 7 5 3 2 VGS = 10V ID = 9A Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 4.0 3.0 100 7 5 3 2 2.0 1.0 10–1 –50 0 50 100 150 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 = 0.5 = 0.2 = 0.1 = 0.05 PDM tw 1.2 100 7 5 3 2 1.0 0.8 10–1 7 5 3 2 = 0.02 = 0.01 Single Pulse T D= tw T 0.6 0.4 –50 0 50 100 150 10–2 –4 10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (°C) Sep. 2001