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Fairchild Semiconductor
Fairchild Semiconductor

FQA19N60 Datasheet

600V N-Channel MOSFET


FQA19N60 Datasheet Preview


FQA19N60
600V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 18.5A, 600V, RDS(on) = 0.38 @ VGS = 10 V
• Low gate charge ( typical 70 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G DS
TO-3P
FQA Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD
TJ, TSTG
TL
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
FQA19N60
600
18.5
11.7
74
±30
1150
18.5
30
4.5
300
2.38
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.42
--
40
©2000 Fairchild Semiconductor International
Units
V
A
A
A
V
mJ
A
mJ
Vns
W
W/°C
°C
°C
Units
°CW
°CW
°CW
Rev. A, April 2000
Page 1

Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.65
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
3.0 --
5.0
VGS = 10 V, ID = 9.3 A
-- 0.3 0.38
VDS = 50 V, ID = 9.3 A (Note 4) --
16
--
V
S
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 2800 3600
-- 350 450
-- 35 45
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 18.5 A,
RG = 25
-- 65 140
-- 210 430
-- 150 310
(Note 4, 5)
--
135
280
VDS = 480 V, ID = 18.5 A,
-- 70 90
VGS = 10 V
-- 17
--
(Note 4, 5) --
33
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 18.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 18.5 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 6.2mH, IAS = 18.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  18.5A, di/dt  200A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 18.5
-- 74
-- 1.4
420 --
4.7 --
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, April 2000
Page 2

Typical Characteristics
Top :
V
15GVS
10 V
8.0 V
7.0 V
6.5 V
6.0 V
101 Bottom : 5.5 V
100
10-1
 Notes :
1. 250s Pulse Test
2. TC = 25
100 101
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.2
1.0
VGS = 10V
0.8
VGS = 20V
0.6
0.4
0.2
 Note : TJ = 25
0.0
0 10 20 30 40 50 60 70
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
5000
4000
3000
2000
1000
Ciss
C
oss
C
rss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
 Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
150
100
10-1
2
25
-55
 Notes :
1. V = 50V
2. 25DS0s Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150 25
 Notes :
1. VGS = 0V
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
VDS = 120V
10
VDS = 300V
8 VDS = 480V
6
4
2
 Note : ID = 18.5 A
0
0 15 30 45 60 75
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2000
Page 3

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9 Notes:
1. VGS =0V
2. ID=250A
0.8
-100
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
is Limited by R
102
DS(on)
100 µs 10 µs
1 ms
101 10 ms
DC
100
10-1
100
 Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
 Notes :
1. V = 10 V
GS
2. ID = 9.3 A
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs. Temperature
20
16
12
8
4
0
25 50 75 100 125 150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0.5
1 0 -1
0 .2
0 .1
0 .05
1 0 -2
0 .02
0 .01
sin g le p u ls e
 N o tes :
1 . Z  JC(t) = 0 .4 2  /W M a x.
2 . D uty F acto r, D = t /t
12
3 . T JM - T C = P D M * Z  JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
101
©2000 Fairchild Semiconductor International
Rev. A, April 2000
Page 4
Part Number FQA19N60
Manufactur Fairchild Semiconductor
Description 600V N-Channel MOSFET
Total Page 8 Pages
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