HIGH POWER SWITCHING USE INSULATED PACKAGE

MITSUBISHI FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM400TU-3A ● ID(rms) .......................................................... 200A ● VDSS.............................................................150V ● Insulated Type ● 6-elements in a pack ● Thermistor inside ● UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION AC motor control of forklift (battery power source), UPS OUTLINE DRAWING & CIRCUIT DIAGRAM 110 97 70.9 32 10 30 7 (6) (17.5) N P Dimensions in mm 6.5 www.DataSheet4U.com 15.2 16.5 10 16 36 16 36 35 30 6.5 26 7 (6) (14.5) 22.75 (15.8) 3 6.5 7 14 22.57 4 11.5 9.2 5-6.5 38 3 (8.7) 3.96 9.1 1 13 12 6 (14.5) (6) U V W 14 20 16.5 A 32 14 20 32 B 14 20 14 (SCREWING DEPTH) 25 Tc measured point Housing Type of A and B (Tyco Electronics P/N:) A: 917353-1 B: 179838-1 CIRCUIT DIAGRAM P (7)GUP (1)SUP U (10)GUN (4)SUN N (8)GVP (2)SVP V (11)GVN (5)SVN (9)GWP (3)SWP W (12)GWN (6)SWN (14) (13) (1)SUP (7)GUP (2)SVP (8)GVP 4 (3)SWP (4)SUN (5)SVN LABEL 75 67 80 90 (6)SWN (9)GWP (10)GUN (11)GVN (12)GWN A B (13)TH1 (14)TH2 May 2006 MITSUBISHI FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.) Symbol VDSS VGSS ID IDM IDA IS*1 ISM*1 PD*4 PD*4 Tch Tstg Viso — — Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque Weight Conditions G-S Short D-S Short TC’ = 112°C*3 Pulse*2 L = 10µH Pulse*2 Pulse*2 TC = 25°C TC’ = 25°C*3 Ratings 150 ±20 200 400 200 200 400 650 880 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 Unit V V A A A A A W W °C °C V N•m N•m g Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting M6 Typical value ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.) Symbol IDSS VGS(th) IGSS rDS(ON) (chip) VDS(ON) (chip) R(lead) Ciss Coss Crss QG td(on) tr td(off) tf trr*1 Qrr*1 VSD*1 Rth(ch-c) Rth(ch-c’) Rth(c-f) Rth(c’-f’) Item Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage Lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance VDS = VDSS, VGS = 0V ID = 20mA, VDS = 10V VGS = VGSS, VDS = 0V ID = 200A VGS = 15V ID = 200A VGS = 15V ID = 200A terminal-chip VDS = 10V VGS = 0V VDD = 80V, ID = 200A, VGS = 15V Conditions Min. — 4.7 — — — — — — — — — — — — — — — — — — — — — — Limits Typ. — 6 — 2.6 4.8 0.52 0.96 0.8 1.12 — — — 1300 — — — — — 7.0 — — — 0.1 0.09 Max. 1 7.3 1.5 3.55 — 0.71 — — — 75 10 6 — 400 300 450 200 200 — 1.3 0.19 0.142 — — Unit mA V µA mΩ V mΩ Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C nF nC VDD = 80V, ID = 200A, VGS1 = VGS2 = 15V RG = 6.3Ω, Inductive load switching operation IS = 200A ns IS = 200A, VGS = 0V MOSFET part (1/6 module)*7 MOSFET part (1/6 module)*3 Case to fin, Thermal grease Applied*8 (1/6 module) Case to fin, Thermal grease Applied*3, *8 (1/6 module) ns µC V °C/W THERMISTOR PART Symbol RTH*6 B*6 Parameter Resistance B Constant 25°C*5 Conditions TTH = Resistance at TTH = 25°C, 50°C*5 Min. — — Limits Typ. 100 4000 Max. — — Unit kΩ K *1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTH is thermistor temperature. *6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K) *7: TC measured point is shown in page OUTLINE DRAWING. *8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”. May 2006 MITSUBISHI FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Chip 400 350 VGS = 20V 15V 400 12V VDS = 10V 10V TRANSFER CHARACTERISTICS (TYPICAL) Chip DRAIN CURRENT ID (A) 300 250 200 9V 150 100 50 Tch = 25°C 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN CURRENT ID (A) 300 Tch = 125°C 200 Tch = 25°C 100 0 5 7 9 11 13 15 DRAIN-SOURCE VOLTAGE VDS (V) GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL) Chip ID = 200A 6 VGS = 12V 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 VGS = 15V GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL) GATE THRESHOLD VOLTAGE VGS(th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS(ON) (mΩ) 7 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 VDS = 10V ID = 20mA CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS (TYPICAL) Chip 3.0 102 7 5 CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN-SOURCE ON-STATE VOLTAGE VDS(ON) (V) Tch = 25°C 2.5 2.0 1.5 ID = 400A 1.0 0.5 0 ID = 200A ID = 100A 0 4 8 12 16 20 CAPACITANCE (nF) 3 2 Ciss 101 7 5 3 2 Coss VGS = 0V Crss 100 –1 0 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 10 DRAIN-SOURCE VOLTAGE VDS (V) May 2006 GATE-SOURCE VOLTAGE VGS (V) MITSUBISHI FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) ID = 200A 103 FREE-WHEEL DIODE FORWARD CHARACTERISTICS Chip (TYPICAL) VGS = 0V Tch = 125°C Tch = 25°C 16 VDD = 60V VDD = 80V SOURCE CURRENT IS (A) 7 5 3 2 12 102 7 5 3 2 8 4 0 0 200 400 600 800 1000 1200 1400 1600 1800 GATE CHARGE QG (nC) 101 0.5 0.6 0.7 0.8 0.9 1.0 SOURCE-DRAIN VOLTAGE VSD (V) 103 7 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr tf Conditions: VDD = 80V VGS = ±15V ID = 200A Tch = 125°C Inductive load 0 10 20 30 40 50 60 70 SWITCHING TIME (ns) 3 td(off) 2 SWITCHING TIME (ns) td(on) 102 7 5 3 2 tr tf Conditions: VDD = 80V VGS = ±15V RG = 6.3Ω Tch = 125°C Inductive load 103 7 5 3 2 102 7 5 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 101 DRAIN CURRENT ID (A) GATE RESISTANCE RG (Ω) 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING LOSS (mJ/pulse) 3 2 Esw(off) Esw(on) Err Conditions: VDD = 80V VGS = ±15V RG = 6.3Ω Tch = 125°C Inductive load 2 3 5 7 102 2 3 5 7 103 SWITCHING LOSS (mJ/pulse) 7 5 7 5 3 2 101 100 7 5 3 2 7 5 Esw(off) 3 2 7 5 3 2 100 Esw(on) 10–1 7 5 3 2 10–2 1 10 10–1 Conditions: 7 5 VDD = 80V 3 VGS = ±15V 2 ID = 200A –2 10 0 10 20 Err Tch = 125°C Inductive load 30 40 50 60 70 DRAIN CURRENT ID (A) GATE RESISTANCE RG (Ω) May 2006 MITSUBISHI FM400TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(ch-c) 7 5 7 5 3 2 Irr (A), trr (ns) 102 7 5 3 2 trr Irr 10–1 7 5 3 2 10–1 7 5 3 2 101 7 5 3 2 100 1 10 Conditions: VDD = 80V VGS = ±15V RG = 6.3Ω Tch = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 10–2 7 5 3 2 Tch = 25°C 10–2 Single pulse 7 5 3 2 10–3 Per unit base = Rth(ch-c) = 0.19°C/W 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 SOURCE CURRENT IS (A) TIME (s) CHIP LAYOUT (110) (97) 90.8 57.8 24.8 N P 49.2 29.4 7 TrUP 1 TrVP 13 TrWP 14 (67) TrUN TrVN TrWN (80) (90) LABEL SIDE 12 6 U V W 25.4 58.4 91.4 May 2006