HIGH POWER SWITCHING USE INSULATED PACKAGE

MITSUBISHI FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID(rms) .......................................................... 100A ● VDSS.............................................................150V ● Insulated Type ● 6-elements in a pack ● Thermistor inside ● UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION AC motor control of forklift (battery power source), UPS OUTLINE DRAWING & CIRCUIT DIAGRAM 110 97 70.9 32 10 30 7 (6) (17.5) N P Dimensions in mm 6.5 www.DataSheet4U.com 15.2 16.5 10 16 36 16 36 35 30 6.5 26 7 (6) (14.5) 22.75 (15.8) 3 6.5 7 14 22.57 4 11.5 9.2 5-6.5 38 3 (8.7) 3.96 9.1 1 13 12 6 (14.5) (6) U V W 14 20 16.5 A 32 14 20 32 B 14 20 14 (SCREWING DEPTH) 25 Tc measured point Housing Type of A and B (Tyco Electronics P/N:) A: 917353-1 B: 179838-1 CIRCUIT DIAGRAM P (7)GUP (1)SUP U (10)GUN (4)SUN N (8)GVP (2)SVP V (11)GVN (5)SVN (9)GWP (3)SWP W (12)GWN (6)SWN (14) (13) (1)SUP (7)GUP (2)SVP (8)GVP 4 (3)SWP (4)SUN (5)SVN LABEL 75 67 80 90 (6)SWN (9)GWP (10)GUN (11)GVN (12)GWN A B (13)TH1 (14)TH2 May 2006 MITSUBISHI FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.) Symbol VDSS VGSS ID IDM IDA IS*1 ISM*1 PD*4 PD*4 Tch Tstg Viso — — Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque Weight Conditions G-S Short D-S Short TC’ = 122°C*3 Pulse*2 L = 10µH Pulse*2 Pulse*2 TC = 25°C TC’ = 25°C*3 Ratings 150 ±20 100 200 100 100 200 410 560 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 Unit V V A A A A A W W °C °C V N•m N•m g Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting M6 Typical value ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.) Symbol IDSS VGS(th) IGSS rDS(ON) (chip) VDS(ON) (chip) R(lead) Ciss Coss Crss QG td(on) tr td(off) tf trr*1 Qrr*1 VSD*1 Rth(ch-c) Rth(ch-c’) Rth(c-f) Rth(c’-f’) Item Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage Lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance VDS = VDSS, VGS = 0V ID = 10mA, VDS = 10V VGS = VGSS, VDS = 0V ID = 100A VGS = 15V ID = 100A VGS = 15V ID = 100A terminal-chip VDS = 10V VGS = 0V VDD = 80V, ID = 100A, VGS = 15V Conditions Min. — 4.7 — — — — — — — — — — — — — — — — — — — — — — Limits Typ. — 6 — 4.8 9.1 0.48 0.91 1.2 1.68 — — — 820 — — — — — 6.5 — — — 0.1 0.09 Max. 1 7.3 1.5 6.6 — 0.66 — — — 50 7 4 — 400 250 450 200 200 — 1.3 0.30 0.22 — — Unit mA V µA mΩ V mΩ Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C Tch = 25°C Tch = 125°C nF nC VDD = 80V, ID = 100A, VGS1 = VGS2 = 15V RG = 13Ω, Inductive load switching operation IS = 100A ns IS = 100A, VGS = 0V MOSFET part (1/6 module)*7 MOSFET part (1/6 module)*3 Case to fin, Thermal grease Applied*8 (1/6 module) Case to fin, Thermal grease Applied*3, *8 (1/6 module) ns µC V °C/W THERMISTOR PART Symbol RTH*6 B*6 Parameter Resistance B Constant 25°C*5 Conditions TTH = Resistance at TTH = 25°C, 50°C*5 Min. — — Limits Typ. 100 4000 Max. — — Unit kΩ K *1: It is characteristics of the anti-parallel, source to drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: TC’ measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTH is thermistor temperature. *6: B = (InR1-InR2)/(1/T1-1/T2) R1: Resistance at T1(K), R2: Resistance at T2(K) *7: TC measured point is shown in page OUTLINE DRAWING. *8: Typical value is measured by using Shin-Etsu Chemical Co., Ltd “G-746”. May 2006 MITSUBISHI FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Chip 200 VGS = 20V 15V 200 12V 10V VDS = 10V TRANSFER CHARACTERISTICS (TYPICAL) Chip DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 160 150 Tch = 125°C 100 Tch = 25°C 120 9V 80 40 Tch = 25°C 0 0 0.4 0.8 1.2 1.6 2.0 50 0 5 7 9 11 13 15 DRAIN-SOURCE VOLTAGE VDS (V) GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL) Chip ID = 100A 10 VGS = 12V 8 6 4 2 0 VGS = 15V GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL) GATE THRESHOLD VOLTAGE VGS(th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS(ON) (mΩ) 12 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 VDS = 10V ID = 10mA 0 20 40 60 80 100 120 140 160 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS (TYPICAL) Chip 3.0 102 7 5 3 2 CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) DRAIN-SOURCE ON-STATE VOLTAGE VDS(ON) (V) Tch = 25°C 2.5 CAPACITANCE (nF) Ciss 2.0 1.5 1.0 0.5 0 ID = 200A ID = 100A ID = 50A 16 20 101 7 5 3 2 100 7 5 3 2 Coss Crss VGS = 0V 0 4 8 12 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V) May 2006 GATE-SOURCE VOLTAGE VGS (V) MITSUBISHI FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) ID = 100A SOURCE CURRENT IS (A) 103 7 5 3 2 FREE-WHEEL DIODE FORWARD CHARACTERISTICS Chip (TYPICAL) VGS = 0V 16 VDD = 60V VDD = 80V Tch = 125°C Tch = 25°C 12 102 7 5 3 2 8 4 0 0 200 400 600 800 1000 1200 101 0.5 0.6 0.7 0.8 0.9 1.0 GATE CHARGE QG (nC) SOURCE-DRAIN VOLTAGE VSD (V) 103 7 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr tf Conditions: VDD = 80V VGS = ±15V ID = 100A Tch = 125°C Inductive load 80 100 120 140 SWITCHING TIME (ns) 3 2 td(on) tr SWITCHING TIME (ns) td(off) 103 7 5 3 2 102 7 5 3 2 tf 101 1 10 Conditions: VDD = 80V VGS = ±15V RG = 13Ω Tch = 125°C Inductive load 2 3 5 7 103 102 7 5 3 2 2 3 5 7 102 101 0 20 40 60 DRAIN CURRENT ID (A) GATE RESISTANCE RG (Ω) 101 SWITCHING LOSS (mJ/pulse) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 101 SWITCHING LOSS (mJ/pulse) 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Esw(on) Esw(off) Conditions: VDD = 80V VGS = ±15V ID = 100A Tch = 125°C Inductive load 100 7 5 3 2 100 7 5 3 2 Esw(on) Err Conditions: VDD = 80V VGS = ±15V RG = 13Ω Tch = 125°C Inductive load 5 7 102 2 3 5 7 103 Err 10–1 7 5 3 2 10–1 7 5 3 2 Esw(off) 2 3 10–2 1 10 10–2 0 20 40 60 80 100 120 140 DRAIN CURRENT ID (A) GATE RESISTANCE RG (Ω) May 2006 MITSUBISHI FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(ch-c) 7 5 7 5 3 2 trr Irr (A), trr (ns) 102 7 5 2 10–1 7 5 3 2 10–1 7 5 3 2 Irr 3 101 7 5 3 2 100 1 10 Conditions: VDD = 80V VGS = ±15V RG = 13Ω Tch = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 10–2 7 5 3 Single pulse 2 Tch = 25°C 10–2 7 5 3 2 10–3 Per unit base = Rth(ch-c) = 0.30°C/W 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 SOURCE CURRENT IS (A) TIME (s) CHIP LAYOUT (110) (97) 90.6 57.6 24.6 N P 48.4 29.6 7 TrUP 1 TrVP 13 TrWP 14 (67) TrUN TrVN TrWN (80) (90) LABEL SIDE 12 6 U V W 25.6 58.6 91.6 May 2006