N-Channel MOSFET

FDD6N50/FDU6N50 500V N-Channel MOSFET January 2006 UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features • 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 12.8 nC) • Low Crss ( typical 9 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D G S D-PAK FDD Series I-PAK GDS FDU Series G www.DataSheet4U.com S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDD6N50/FDU6N50 500 6 3.8 24 ±30 270 6 8.9 4.5 89 0.71 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min. --- Max. 1.4 83 Unit °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD6N50/FDU6N50 REV. A FDD6N50/FDU6N50 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDD6N50 FDD6N50 FDU6N50 Device FDD6N50TM FDD6N50TF FDU6N50TU Package D-PAK D-PAK I-PAK TC = 25°C unless otherwise noted Reel Size 380mm 380mm - Tape Width 16mm 16mm - Quantity 2500 2000 70 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 3A VDS = 40V, ID = 3A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 500 -----3.0 ------ Typ. -0.5 -----0.76 2.5 720 95 9 6 55 25 35 12.8 3.7 5.8 Max Units --1 10 100 -100 5.0 0.9 -940 190 13.5 20 120 60 80 16.6 --V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 250V, ID = 6A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 400V, ID = 6A VGS = 10V -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 6A VGS = 0V, IS = 6A dIF/dt =100A/µs (Note 4) ------ ---275 1.7 6 24 1.4 --- A A V ns µC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 6A, VDD = 50V, L=13.5mH, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDD6N50/FDU6N50 REV. A 2 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 20 Top : VGS 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Figure 2. Transfer Characteristics 10 1 ID , Drain Current [A] 15 ID, Drain Current [A] 150∩ 10 0 Bottom : 10 25∩ -55∩ 10 -1 5 ∝ Notes : 1. 250レ Pulse Test s 2. TC = 25∩ ∝ Note 1. VDS = 40V s 2. 250レ Pulse Test 0 0 10 20 30 40 50 10 -2 VDS, Drain-Source Voltage [V] 2 4 6 8 10 VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature RDS(ON) [ヘ ],Drain-Source On-Resistance 2.5 IDR , Reverse Drain Current [A] 10 1 2.0 VGS = 10V 1.5 1.0 VGS = 20V 10 0 150∩ 25∩ ∝ Notes : 1. VGS = 0V 2. 250レ Pulse Test s 0.5 ∝ Note : TJ = 25∩ 0.0 0 5 10 15 20 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 12 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 100V 1000 VGS, Gate-Source Voltage [V] 10 VDS = 250V VDS = 400V Ciss Coss Capacitance [pF] 8 6 100 Crss ∝ Notes : 1. VGS = 0 V 2. f = 1 MHz 4 2 ∝ Note : ID = 6A 10 0 1 0 10 10 0 5 10 15 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDD6N50/FDU6N50 REV. A 3 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 1.1 2.0 1.0 1.5 0.9 ♦ Notes : 1.0 ♦ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 1. VGS = 10 V 2. ID = 3 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 8 Figure 10. Maximum Drain Current vs. Case Temperature 10 2 Operation in This Area is Limited by R DS(on) 10 us ID, Drain Current [A] 1 ms 10 ms 10 0 DC ID, Drain Current [A] 10 3 10 1 100 us 6 4 ∝ Notes : 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 2 10 -2 10 0 10 1 10 2 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [∩ ] Figure 11. Transient Thermal Response Curve 10 0 ZヨJC Thermal Response (t), D = 0 .5 0 .2 0 .1 10 -1 ∝ N o te s : 1 . Z ヨ J C = 1 .4 ∩ /W M a x. (t) 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z ヨ J C (t) 0 .0 5 0 .0 2 0 .0 1 PDM t1 s in g le p u ls e t2 0 1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FDD6N50/FDU6N50 REV. A 4 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD6N50/FDU6N50 REV. A 5 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDD6N50/FDU6N50 REV. A 6 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD6N50/FDU6N50 REV. A 7 www.fairchildsemi.com FDD6N50/FDU6N50 500V N-Channel MOSFET Mechanical Dimensions (Continued) I-PAK Dimensions in Millimeters FDD6N50/FDU6N50 REV. 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