30V N-Channel PowerTrench MOSFET

FDS8670 30V N-Channel PowerTrench® MOSFET August 2006 FDS8670 tm 30V N-Channel PowerTrench® MOSFET General Description This device has been designed specifically to improve the efficiency of DC-DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low Rds(on) has been maintained to provide an extremely versatile device. Features • • • • • 21 A, 30 V Max RDS(ON) = 3.7 mΩ @ VGS = 10 V Max RDS(ON) = 5.0 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) and gate charge Minimal Qgd (5.5 nC typical) 100% RG tested (0.9 Ω typical) RoHS Compliant Applications • High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Synchronous Rectifier • Multi purpose Point Of Load www.DataSheet4U.com D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS ID PD VGSS Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 21 105 2.5 1.2 1 –55 to +150 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W Package Marking and Ordering Information Device Marking FDS8670 Device Reel Size 13’’ FDS8670 Tape width 12mm Quantity 2500 units FDS8670 Rev C (W) ©2005 Fairchild Semiconductor Corporation FDS8670 30V N-Channel PowerTrench® MOSFET Electrical Characteristics Symbol BVDSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 µA Min Typ Max Units 30 39 1 ±100 1 1.4 –5 3.3 4.2 4.4 118 4040 1730 160 0.2 0.9 12 11 56 68 1.5 21 20 90 108 82 42 3.7 5.0 5.5 3 V mV/°C µA nA V mV/°C mΩ Off Characteristics ∆BVDSS ∆TJ IDSS IGSS VGS(th) ∆VGS(th) ∆TJ RDS(on) ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±20 V, VDS = VGS, VGS = 0 V VDS = 0 V ID = 250 µA On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 18 A VGS=10 V, ID =21 A, TJ=125°C VDS = 10 V, ID = 21 A gFS Ciss S pF pF pF Ω ns ns ns ns nC nC nC nC 1.2 V ns A nC Dynamic Characteristics Input Capacitance Coss Crss RG td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd VSD trr IRM Qrr Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω Total Gate Charge at VGS = 10V Total Gate Charge at VGS = 5V Gate–Source Charge Gate–Drain Charge Drain–Source Diode Forward Voltage Diode Reverse Recovery Time VDD = 15 V, ID = 21 A 58.5 30 9.5 5.5 Drain–Source Diode Characteristics and Maximum Ratings VGS = 0 V, IS = 2.1 A (Note 2) 0.7 51 1.5 37 Diode Reverse Recovery Current Diode Reverse Recovery Charge IF = 21 A, dIF/dt = 100 A/µs Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when 2 mounted on a 1 in pad of 2 oz copper b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS8670 Rev C (W) FDS8670 30V N-Channel PowerTrench® MOSFET Typical Characteristics 105 87.5 ID, DRAIN CURRENT (A) 70 52.5 35 17.5 0 0 VGS = 10V 6.0V 4.5V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.4 VGS = 2.5V 2.8 2.2 1.6 3.0V 3.5V 4.0V 4.5V 2.5V 1 6.0V 10V 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0.4 0 35 70 ID, DRAIN CURRENT (A) 105 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.011 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 21A VGS = 10V 1.4 ID = 10.5A 0.008 1.2 1 TA = 125oC 0.005 0.8 TA = 25oC 0.002 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 105 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1000 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V 100 10 1 0.1 0.01 25oC -55oC ID, DRAIN CURRENT (A) 70 TA = 125oC 35 TA =125oC -55oC 0.001 0 1 25 C o 0.0001 3.5 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8670 Rev C (W) FDS8670 30V N-Channel PowerTrench® MOSFET Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 21A 8 5000 f = 1MHz VGS = 0 V 4000 CAPACITANCE (pF) VDS = 10V 20V Ciss 6 15V 4 3000 2000 Coss 2 1000 Crss 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 1000 P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics. SINGLE PULSE RθJA = 125°C/W TA = 25°C ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10 10s VGS = 10V SINGLE PULSE RθJA = 125oC/W TA = 25 C o 100µs 1ms 10ms 100ms 1s 80 60 1 DC 40 0.1 20 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RθJA(t) = r(t) * RθJA RθJA = 125 °C/W P(pk) 0.01 0.1 0.1 0.05 0.02 t1 0.01 t2 SINGLE PULSE TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8670 Rev C (W) FDS8670 30V N-Channel PowerTrench® MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product tha