N-Channel MOSFET

FDP16N50 / FDPF16N50 500V N-Channel MOSFET February 2007 FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features • 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 32 nC) • Low Crss ( typical 20 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series TO-220F GD S FDPF Series S www.DataSheet4U.com Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP16N50 500 16 9.6 64 ±30 780 16 20 4.5 200 1.59 FDPF16N50 16 * 9.6 64 Unit V A A A V mJ A mJ V/ns 52 0.41 -55 to +150 300 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FDP16N50 0.63 0.5 62.5 FDPF16N50 2.4 -62.5 Unit °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDP16N50 / FDPF16N50 Rev. B FDP16N50 / FDPF16N50 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDP16N50 FDPF16N50 Device FDP16N50 FDPF16N50 Package TO-220 TO-220F Reel Size - Tape Width - Quantity 50 50 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 500 ------ Typ. -0.5 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.31 23 5.0 0.38 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---1495 235 20 1945 310 30 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400V, ID = 16A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 250V, ID = 16A RG = 25Ω -------- 40 150 65 80 32 8.5 14 90 310 140 170 45 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.5mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 16A VGS = 0V, IS = 16A dIF/dt =100A/µs (Note 4) ------ ---490 5.0 9.2 37 1.4 --- A A V ns µC 2 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 2 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 1 ID, Drain Current [A] 10 1 150 C 25 C -55 C * Notes : 1. VDS = 40V 2. 250µs Pulse Test o o o 10 0 * Notes : 1. 250µs Pulse Test 10 -1 2. TC = 25 C o 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.6 RDS(ON) [Ω], Drain-Source On-Resistance 0.5 VGS = 10V 0.4 IDR, Reverse Drain Current [A] 10 1 VGS = 20V 0.3 150oC 25 C o * Note : TJ = 25 C o * Notes : 1. VGS = 0V 2. 250µs Pulse Test 0.2 0 5 10 15 20 25 30 35 40 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 4000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 10 VDS = 100V VDS = 250V VDS = 400V 3000 Capacitances [pF] Coss VGS, Gate-Source Voltage [V] 8 2000 Ciss 6 4 1000 Crss * Note : 1. VGS = 0 V 2. f = 1 MHz 2 * Note : ID = 16A 0 -1 10 10 0 10 1 0 0 10 20 30 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 8 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area - FDP16N50 Figure 9-2. Maximum Safe Operating Area - FDPF16N50 10 2 10 2 10 µs 100 µs 10 µs ID, Drain Current [A] 10 1 10 0 Operation in This Area is Limited by R DS(on) 1 ms 10 ms 100 ms DC ID, Drain Current [A] 100 µs 10 1 1 ms 10 ms Operation in This Area is Limited by R DS(on) 100 ms DC 10 0 10 -1 * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -1 * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 -2 10 0 10 1 10 2 10 -2 10 0 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Currentvs. Case Temperature 20 15 ID, Drain Current [A] 10 5 0 25 50 75 100 o 125 150 TC, Case Temperature [ C] 4 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP16N50 10 0 ZθJC(t), Thermal Response D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 10 -2 PDM t1 t2 * N o te s : 1 . Z θ J C ( t) = 0 .6 3 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) o s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11-2. Transient Thermal Response Curve - FDPF16N50 10 0 D = 0 .5 0 .2 0 .1 ZθJC(t), Thermal Response 10 -1 0 .0 5 0 .0 2 0 .0 1 PDM t1 t2 * N o te s : 1 . Z θ J C ( t) = 2 .4 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) o 10 -2 s in g le p u ls e -5 -4 -3 -2 10 10 10 10 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 5 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Mechanical Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 8 FDP16N50 / FDPF16N50 Rev. B www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 9 FDP16N50 / FDPF16N50 Rev. B 15.87 ±0.20 www.fairchildsemi.com FDP16N50 / FDPF16N50 500V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Ac