N-Channel PowerTrench SyncFET

FDMS8672S N-Channel PowerTrench® SyncFETTM February 2007 FDMS8672S N-Channel PowerTrench® SyncFETTM 30V, 35A, 5mΩ Features General Description Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 17A Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant tm The FDMS8672S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Application Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S 5 S G www.DataSheet4U.com 4 3 2 1 6 7 D D D D Power 56 (Bottom view) 8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C Ratings 30 ±20 35 90 17 200 50 2.5 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 2.5 50 °C/W Package Marking and Ordering Information Device Marking FDMS8672S Device FDMS8672S Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMS8672S Rev.C1 1 www.fairchildsemi.com FDMS8672S N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 50mA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V 30 23 500 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 1mA ID = 50mA, referenced to 25°C VGS = 10V, ID = 17A VGS = 4.5V, ID = 15A VGS = 10V, ID = 17A ,TJ = 125°C VDS = 10V, ID = 17A 1 1.5 -5.4 4.0 5.2 6.1 72 5.0 7.0 7.8 S mΩ 3 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V f = 1MHz f = 1MHz 1890 555 205 1.1 2515 740 380 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(4.5V) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 4.5V Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 0V to 10V VGS = 0V to 4.5V VDD = 15V, ID = 17A VDD = 15V, ID = 17A VGS = 10V, RGEN = 7Ω 11 17 27 7 33 16 5 6 20 31 44 14 47 23 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 1.7A IF = 17A, di/dt = 300A/µs 0.4 20 16 0.7 32 28 V ns nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse time < 300µs, Duty cycle < 2.0%. FDMS8672S Rev.C1 2 www.fairchildsemi.com FDMS8672S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted 200 160 120 80 40 0 0 VGS = 3.0V VGS = 10V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5V VGS = 4.0V 3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 2.5 2.0 1.5 VGS = 3.0V VGS = 3.5V VGS = 4V VGS = 3.5V VGS = 4.5V 1.0 0.5 VGS = 10V 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 40 80 120 ID, DRAIN CURRENT(A) 160 200 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 14 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 17A VGS = 10V ID = 17A 12 10 TJ = 125oC PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 8 6 4 3 TJ = 25oC 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 150 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 20 10 ID, DRAIN CURRENT (A) 120 90 60 30 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 0V 1 TJ = 150oC TJ = 150oC TJ = 25oC TJ = -55oC 0.1 TJ = 25oC TJ = -55oC 0.01 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.7 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS8672S Rev.C1 3 www.fairchildsemi.com FDMS8672S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 VDD = 10V 3000 Ciss CAPACITANCE (pF) 6 VDD = 15V 1000 4 VDD = 20V Coss 2 0 f = 1MHz VGS = 0V Crss 0 5 10 15 20 25 30 35 100 0.1 Qg, GATE CHARGE(nC) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) VGS = 10V 30 IAS, AVALANCHE CURRENT(A) 60 VGS = 4.5V 10 TJ = 25oC 40 TJ = 125oC 20 o Limited by Package RθJC = 2.5 C/W 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 1000 0 25 50 75 100 125 o 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 500 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 1000 VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T A ---------------------125 TA = 25oC 100 10 1 0.1 0.01 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25OC 100us 1ms 10ms 100ms 1s 10s DC P(PK), PEAK TRANSIENT POWER (W) 100 I = I25 10 SINGLE PULSE 1 10 80 1 -3 10 10 -2 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -1 0 1 10 2 10 3 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMS8672S Rev.C1 4 www.fairchildsemi.com FDMS8672S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 1E-3 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMS8672S Rev.C1 5 www.fairchildsemi.com FDMS8672S N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS8672S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 TJ = 125oC CURRENT: 0.8A/Div 0.01 TJ = 100oC 1E-3 1E-4 TJ = 25oC 1E-5 0 5 10 15 20 25 30 TIME: 12.5nS/Div VDS, REVERSE VOLTAGE (V) Figure 14. FDMS8672S SyncFET Body Diode Reverse Recovery Characteristics Figure 15. SyncFET Body Diode Reverse Leakage vs Drain to Source Voltage FDMS8672S Rev.C1 6 www.fairchildsemi.com FDMS8672S N-Channel PowerTrench® SyncFETTM FDMS8672S Rev.C1 7 www.fairchildsemi.com FDMS8672S N-Channel PowerTrench® SyncFETTM TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS