N-Channel Power Trench MOSFET

FDMC8878 N-Channel Power Trench® MOSFET February 2007 FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ Features General Description Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A Low Profile - 1mm max in Power 33 RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Application DC - DC Conversion Bottom Top 5 6 7 8 D 1 D D D D D 5 6 7 8 4 G 3 S 2 S 1 S www.DataSheet4U.com D S S S G 4 3 2 D Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 16.5 38 9.6 60 31 2.1 -55 to +150 W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 4 60 °C/W Package Marking and Ordering Information Device Marking FDMC8878 Device FDMC8878 Package Power 33 Reel Size 7” Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMC8878 Rev.D 1 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V, VGS = 0V TJ = 125°C VGS = ±20V, VDS = 0V 30 20 1 100 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 9.6A VGS = 4.5V, ID = 8.7A VGS = 10V, ID = 9.6A , TJ = 125°C VDS = 5V, ID = 9.6A 1 1.7 -5.7 9.6 12.1 13.5 35 14.0 17.0 20.0 S mΩ 3 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 925 190 120 1.1 1230 255 180 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 10V , VDD = 15V , ID = 9.6A VDD = 15V, ID = 9.6A VGS = 10V, RGEN = 6Ω 8 4 20 3 18 2.8 3.9 16 10 36 10 26 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 9.6A (Note 2) 0.8 23 14 1.2 35 21 V ns nC IF = 9.6A, di/dt = 100A/µs Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper b. 135°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMC8878 Rev.D 2 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) 2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 50 40 30 20 10 0 VGS = 10V VGS = 3.5V VGS = 4.5V VGS = 4V VGS = 3V 2.0 VGS = 3V VGS = 4V VGS = 4.5V 1.5 VGS = 3.5V 1.0 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0.5 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0 10 20 30 40 50 60 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 30 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = 9.6A VGS = 10V ID = 9.6A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 25 20 15 10 5 TJ = 125oC TJ = 25oC -50 -25 0 25 50 75 100 125 150 3 TJ, JUNCTION TEMPERATURE (oC) 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On- Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 60 50 ID, DRAIN CURRENT (A) 40 30 TJ = 25oC PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VDD = 5V 10 1 0.1 0.01 TJ = 150oC TJ = -55oC TJ = 25oC 20 10 0 TJ = 150oC TJ = -55oC 0 1 2 3 4 0.001 0.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC8878 Rev.D 3 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 9.6A 3000 VDD = 15V VDD = 10V 8 6 4 2 0 Ciss CAPACITANCE (pF) 1000 Coss VDD = 20V 100 50 0.1 f = 1MHz VGS = 0V Crss 0 5 10 15 20 1 10 30 Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 12 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 10 10 8 VGS = 10V TJ = 25oC 6 4 2 RθJA = 60 C/W o VGS = 4.5V TJ = 125oC 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 80 0 25 50 75 100 125 o 150 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 80 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 300 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 – T A ---------------------125 P(PK), PEAK TRANSIENT POWER (W) 100us 1ms VGS = 10V 10 1 0.1 0.01 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 100 10ms 100ms 1s 10s DC SINGLE PULSE TJ = MAX RATED TA = 25oC 10 1 0.5 -3 10 SINGLE PULSE -2 -1 0 1 2 3 0.001 0.1 1 10 80 10 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) 10 10 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMC8878 Rev.D 4 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.003 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMC8878 Rev.D 5 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET FDMC8878 Rev.D 6 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at a