N-Channel Power Trench MOSFET

FDMC8854 N-Channel PowerTrench® MOSFET February 2007 FDMC8854 N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ Features Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A Low Profile - 1mm max in Power 33 RoHS Compliant tm General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Application DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 4 3 2 1 www.DataSheet4U.com 7 4 3 2 1 S S S G 8 Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 15 67 15 30 41 2.0 -55 to +150 W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 60 °C/W Package Marking and Ordering Information Device Marking FDMC8854 Device FDMC8854 Package Power 33 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMC8854 Rev.C 1 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V, VGS = 0V 30 21 1 ±100 V mV/°C µA nA On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 15A VGS = 4.5V, ID = 13A VGS = 10V, ID = 15A, TJ = 125°C VDS = 5V, ID = 15A 1 1.9 -6 4.4 5.6 6.6 60 5.7 7.6 9.0 S mΩ 3 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz f = 1MHz 2560 515 290 1.3 3405 685 435 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD =10V, ID = 15A, VGS = 10V VDD = 10V, ID = 15A VGS = 10V, RGEN = 6Ω 13 5 31 5 41 7 7 23 10 50 10 57 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 15A (Note 2) 0.8 33 28 1.3 50 42 V ns nC IF = 15A, di/dt = 100A/µs Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 135°C/W when mounted on a minimum pad of 2 oz copper a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMC8854 Rev.C 2 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS = 10.0V VGS =4.5V VGS = 4.0V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 180 ID, DRAIN CURRENT (A) 3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 150 120 90 60 30 0 0 1 2 2.5 VGS = 3.5V 2.0 VGS = 4V VGS = 4.5V VGS = 3.5V 1.5 1.0 VGS = 10.0V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0.5 0 30 60 90 120 150 180 ID, DRAIN CURRENT(A) 3 4 5 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 15 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -75 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID =15A VGS = 10V rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 12 ID =15A 9 TJ = 125oC 6 TJ = 25oC 3 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On- Resistance vs Junction Temperature 100 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V ID, DRAIN CURRENT (A) 80 60 40 TJ = 150oC TJ = 25oC 10 1 0.1 TJ = -55oC TJ = 150oC TJ = 25oC 20 TJ = -55oC 0.01 1E-3 0.0 0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC8854 Rev.C 3 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 VDD =15V ID = 15A VDD = 5V 4000 Ciss VDD = 10V CAPACITANCE (pF) 1000 Coss 4 2 0 0 10 20 30 Qg, GATE CHARGE(nC) 40 50 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 10 TJ = 25oC 60 VGS = 10V 40 Package limited VGS = 4.5V TJ = 125oC 20 RθJC = 3 C/W o 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 1000 0 25 50 75 100 o 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 ID, DRAIN CURRENT (A) 100 VGS = 10V TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 – T A ---------------------125 10 1ms 1R DS(ON) LIMITED SINGLE PULSE TJ = MAX RATED = 135oC/W R θJA 10ms 100ms 1s DC 10 0.1 TA = 25oC 1 SINGLE PULSE 0.01 0.01 0.1 1 10 100 0.5 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMC8854 Rev.C 4 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZθJA D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 0.004 -3 10 SINGLE PULSE -2 -1 0 1 10 10 10 10 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMC8854 Rev.C 5 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET FDMC8854 Rev.C 6 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This