N-Channel Power Trench MOSFET

FDMC8554 N-Channel PowerTrench® MOSFET February 2007 FDMC8554 N-Channel Power Trench® MOSFET 20V, 16.5A, 5mΩ Features Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm RoHS Compliant tm General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for switching performance and ultra low rdson. Application Synchronous rectifier ORing FET POL rectifier Bottom 7 8 D D D D Top 5 6 D D www.DataSheet4U.com 5 6 7 8 4 3 2 1 G S S S 4 3 2 1 S S S G D D Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 20 ±20 16.5 72 16.5 36 41 2.0 -55 to +150 W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3 60 °C/W Package Marking and Ordering Information Device Marking FDMC8554 Device FDMC8554 Package Power 33 Reel Size 7’’ Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMC8554 Rev.C 1 www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 16V, VGS = 0V TJ = 125°C VGS = ±20V, VDS = 0V 20 15.7 1 100 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 16.5A VGS = 4.5V, ID = 14A VGS = 10V, ID = 16.5A, TJ = 125°C VDS = 5V, ID = 16.5A 1.0 1.8 -6.1 3.6 4.6 5.4 62 5.0 6.4 7.1 S mΩ 3.0 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz f = 1MHz 2540 795 510 1.2 3380 1060 765 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 4.5V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = 10V, ID = 16.5A VDD = 10V, ID = 16.5A VGS = 10V, RGEN = 6Ω 13 10 32 7 44 24 8.5 10 24 20 51 14 62 34 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 16.5A (Note 2) 0.8 31 22 1.3 47 33 V ns nC IF = 16.5A, di/dt = 100A/µs Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper b. 135°C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDMC8554 Rev.C 2 www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 200 VGS = 4.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 VGS = 3.5V VGS = 4V VGS =4.5V VGS = 5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 150 VGS =5V VGS = 10V 2 VGS = 4V 100 1 VGS = 10V 50 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 3.5V 0 0 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 5 0 0 50 100 150 ID, DRAIN CURRENT(A) 200 Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 20 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 16.5A VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 16.5A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 15 10 TJ = 125oC 5 TJ = 25oC 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On- Resistance vs Junction Temperature 100 ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 TJ = 150oC 75 VDD = 5V TJ = 150oC 1 TJ = 25oC 50 0.1 0.01 1E-3 0.0 TJ = -55oC 25 TJ = 25oC TJ = -55oC 0 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC8554 Rev.C 3 www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 16.5A VDD = 5V 5000 Ciss 8 VDD = 10V CAPACITANCE (pF) Coss 6 4 2 0 0 10 20 30 Qg, GATE CHARGE(nC) 40 50 1000 VDD = 15V Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 40 IAS, AVALANCHE CURRENT(A) ID, DRAIN CURRENT (A) 60 VGS = 10V 10 TJ = 25oC 40 Limited by Package VGS = 4.5V TJ = 125oC 20 RθJC = 3 C/W o 1 -2 10 0 10 -1 10 0 10 1 10 2 10 3 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 300 100 VGS = 10V TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 – T A ---------------------125 100 rDS(on)LIMITED ID, DRAIN CURRENT (A) 10 1ms 10ms 1 100ms 10 0.1 SINGLE PULSE TJ = MAX RATED RθJA=135OC/W TA = 25OC 1s 10s DC SINGLE PULSE 1 R θJA =135 C/W -2 -1 0 1 2 3 O 0.01 0.01 0.1 1 10 100 0.5 -3 10 10 10 10 10 10 10 VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDMC8554 Rev.C 4 www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 SINGLE PULSE RθJA = 135 C/W o 0.002 -3 10 10 -2 10 10 10 t, RECTANGULAR PULSE DURATION(s) -1 0 1 10 2 10 3 Figure 13. Transient Thermal Response Curve FDMC8554 Rev.C 5 www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET FDMC8554 Rev.C 6 www.fairchildsemi.com FDMC8554 N-Channel PowerTrench® MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains