Dual N-Channel PowerTrench MOSFET

FDMB3800N Dual N-Channel PowerTrench® MOSFET January 2006 FDMB3800N Dual N-Channel PowerTrench® MOSFET 4.8A, 30V, 40mΩ General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. LE A REE I DF Features RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability. RoHS Compliant Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous -Pulsed Power dissipation for Single Operation Power dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) Ratings 30 ±20 4.8 9 1.6 0.75 -55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 80 165 °C/W Package Marking and Ordering Information Device Marking 3800 Device FDMB3800N Reel Size 7inch 1 ©2006 Fairchild Semiconductor Corporation FDMB3800N Rev. C M ENTATIO LE N MP GATE SOURCE www.DataSheet4U.com Q1 5 6 7 8 4 3 2 1 Q2 Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 55°C VGS = ±20V, VDS = 0V 30 24 1 10 ±100 µA nA V mV/°C On Characteristics (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(ON) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250µA ID = 250µA, Referenced to 25°C VGS = 10V, ID = 4.8A VGS = 4.5V, ID = 4.3A VGS = 10V, ID = 4.8A TJ = 125°C VGS = 10V, VDS = 5V VDS = 5V, ID = 4.8A 1 10 1.9 -4 32 41 43 14 3 40 51 61 A S mΩ V mV/°C Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1.0MHz f=1.0MHz 350 90 40 3 465 120 60 pF pF pF Ω Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 15V, ID = 7.5A, VGS = 5V VDD = 15V, ID = 1A VGS = 10V, RGEN = 6Ω 8 5 21 2 4 1.0 1.5 16 10 34 10 5.6 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0V, IS =1.25 A (Note 2) IF= 4.8A, dIF/dt=100A/µs 0.8 1.25 1.2 22 9 A V ns nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% a) 80°C/W when mounted on a 1in2 pad of 2 oz copper b) 165°C/W when mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2 FDMB3800N Rev. C www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET Typical Characteristics 10 I D , D RAIN CURRENT (A) 8 6.0V 3.5V N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS T A N C E VGS = 10V 2.8 4.5V 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8 VGS = 3.0V 6 3.0V 4 3.5V 4.0V 4.5V 6.0V 2 2.5V 0 0 0.25 0.5 0.75 1 1.25 VDS, DRAIN-SOURCE VOLTAGE (V) 10V 10 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.6 DRAIN TO SOURCE ON-RESISTANCE (OHM) Figure 2. On Resistance vs Drain Current and Gate Voltage 0.102 ID = 2.4A 0.092 0.082 0.072 0.062 0.052 0.042 0.032 0.022 TJ = 25oC o N O R M A L IZ E D D R A IN -S O U R C E O N -R E S IS T A N C E ID = 4.8A VGS = 10V 1.4 1.2 1 TJ = 125 C 0.8 0.6 -50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10 TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Temperature 15 o Figure 4. On Resistance vs Gate to Source Voltage 10 I S , R E V E R S E D R A IN C U R R E N T (A ) VDS = 5V I D , D R A IN C U R R E N T (A ) 12 TJ = -55 C o 25 C 125 C o VGS = 0V 1 9 0.1 TJ = 125oC 6 0.01 25oC -55oC 3 0.001 0 1.5 0.0001 2 2.5 3 3.5 4 0 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDMB3800N Rev. C www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET Typical Characteristics 10 V G S , G A T E -S O U R C E V O L TA G E (V ) ID = 4.8A 8 VDS = 10V 20V 15V 500 C A P A C IT A N C E (p F ) 400 300 200 100 600 f = 1MHz VGS = 0 V Ciss 6 4 Coss 2 Crss 0 0 1 2 3 4 5 6 7 8 Qg, GATE CHARGE (nC) 0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 6 5 ID, DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 10 RDS(ON) LIMIT 100us 1ms 10ms 4 3 2 1 0 VGS = 10V 1 VGS = 10V SINGLE PULSE o RθJA = 165 C/W TA = 25oC 0.01 0.1 1 10 VGS = 4.5V 100ms 1s 10s DC 100 RθJA = 80°C/W 0.1 25 50 75 100 125 o TA, AMBIENT TEMPERATURE ( C) 150 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(pk), PEAK TRANSIENT POWER (W) 50 SINGLE PULSE RθJA = 165°C/W TA= 25°C 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation 4 FDMB3800N Rev. C www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET Typical Characteristics NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 P(pk) t1 t2 Peak TJ = TA + PDM *RθJA* ZθJA Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. Figure 12. Transient Thermal Response Curve 5 FDMB3800N Rev. C www.fairchildsemi.com FDMB3800N Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout 6 FDMB3800N Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order