Dual P-Channel PowerTrench MOSFET

FDMA1023PZ Dual P-Channel PowerTrench® MOSFET March 2007 FDMA1023PZ –20V, –3.7A, 72mΩ Features Dual P-Channel PowerTrench® MOSFET General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Max rDS(on) = 72mΩ at VGS = –4.5V, ID = –3.7A Max rDS(on) = 95mΩ at VGS = –2.5V, ID = –3.2A Max rDS(on) = 130mΩ at VGS = –1.8V, ID = –2.0A Max rDS(on) = 195mΩ at VGS = –1.5V, ID = –1.0A Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant Pin 1 S1 G1 D2 S1 D1 1 6 D1 D2 www.DataSheet4U.com G1 2 5 4 G2 D2 3 MicroFET 2X2 D1 G2 S2 S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±8 –3.7 –6 1.5 0.7 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single Operation, Junction to Ambient Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 69 151 °C/W Package Marking and Ordering Information Device Marking 023 Device FDMA1023PZ Package MicroFET 2X2 Reel Size 7” Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMA1023PZ Rev.B 1 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = –250μA, VGS = 0V ID = –250μA, referenced to 25°C VDS = –16V, VGS = 0V VGS = ±8V, VDS = 0V –20 –11 –1 ±10 V mV/°C μA μA On Characteristics VGS(th) ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = –250μA ID = –250μA, referenced to 25°C VGS = –4.5V, ID = –3.7A VGS = –2.5V, ID = –3.2A rDS(on) Static Drain to Source On-Resistance VGS = –1.8V, ID = –2.0A VGS = –1.5V, ID = –1.0A VGS = –4.5V, ID = –3.7A,TJ =125°C gFS Forward Transconductance VDS = –5V, ID = –3.7A –0.4 –0.7 2.5 60 75 100 130 81 12 72 95 130 195 91 S mΩ –1.5 V mV/°C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = –10V, VGS = 0V, f = 1MHz 490 100 90 655 135 135 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = –10V, ID = –3.7A VGS = –4.5V VDD = –10V, ID = –1A VGS = –4.5V, RGEN = 6Ω 9 12 64 37 8.6 0.7 2.0 18 22 103 60 12 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = –1.1A (Note 2) –0.8 32 15 –1.1 –1.2 48 23 A V ns nC IF = –3.7A, di/dt = 100A/μs FDMA1023PZ Rev.B 2 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJCis guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper (c) RθJA = 69oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (d) RθJA = 151oC/W when mounted on a minimum pad of 2 oz copper. a)86oC/W when mounted on a 1in2 pad of 2 oz copper. b)173oC/W when mounted on a minimum pad of 2 oz copper. c)69oC/W when mounted on a 1in2 pad of 2 oz copper. d)151oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% FDMA1023PZ Rev.B 3 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS = -4.5V VGS = -3.0V VGS = -2.5V VGS = -2.0V VGS = -1.8V VGS = -1.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 -ID, DRAIN CURRENT (A) 2.6 VGS = -1.5V 5 4 3 2 1 0 0.0 2.2 VGS = -1.8V 1.8 1.4 1.0 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS = -2.0V VGS = -2.5V VGS = -3.0V VGS = -4.5V PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 0.6 0 1 2 3 4 -ID, DRAIN CURRENT(A) 5 6 0.5 1.0 1.5 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = -3.7A VGS = -4.5V ID = -1.85A PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 160 120 TJ = 125oC 80 TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 40 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 3. Normalized On-Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0V 6 5 4 3 2 1 TJ = -55oC TJ = 125oC TJ = 25oC PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VDD= -5V -ID, DRAIN CURRENT (A) 1 TJ = 125oC 0.1 TJ = 25oC 0.01 TJ = -55oC 0 0.0 0.5 1.0 1.5 -VGS, GATE TO SOURCE VOLTAGE (V) 2.0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMA1023PZ Rev.B 4 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = -3.7A 1000 Ciss VDD = -5V 4 3 VDD = -10V CAPACITANCE (pF) 2 VDD = -15V Coss 100 f = 1MHz VGS = 0V 1 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 Crss 40 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics 20 10 -ID, DRAIN CURRENT (A) Figure 8. Capacitance Characteristics 100 P(PK), PEAK TRANSIENT POWER (W) rDS(on) LIMIT VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T A ----------------------125 TA = 25oC 100us 1ms 10ms VGS=-4.5V 1 10 I = I25 0.1 SINGLE PULSE R θJA =173 o C/W TA = 25oC 100ms 1s 10s DC SINGLE PULSE o RθJA = 173 C/W 1 0.5 -4 10 TA=25 C o SINGLE PULSE 0.01 0.1 1 10 60 10 -3 -VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -2 -1 0 1 2 3 0.01 0.005 -4 10 SINGLE PULSE 10 -3 10 10 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve FDMA1023PZ Rev.B 5 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET FDMA1023PZ Rev.B 6 www.fairchildsemi.com FDMA1023PZ Dual P-Channel PowerTrench® MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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