Integrated N-Channel PowerTrench MOSFET and Schottky Diode

FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode January 2007 FDFS6N548 30V, 7A, 23mΩ Features Integrated N-Channel PowerTrench® MOSFET and Schottky Diode General Description The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. tm Max rDS(on) = 23mΩ at VGS = 10V, ID = 7A Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 6A VF < 0.45V @ 2A VF < 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Low Miller Charge Application DC/DC Conversion D C C D www.DataSheet4U.com A 1 A 2 S 3 G 4 8 C 7 C 6 D 5 D SO-8 Pin 1 S A A G MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain-Source Avalanche Energy Schotty Repetitive Peak Reverse Voltage Schotty Average Forward Current Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 7 30 2 1.6 12 20 2 -55 to +150 Units V V A W mJ V A °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 78 40 °C/W Package Marking and Ordering Information Device Marking FDFS6N548 Device FDFS6N548 Package SO-8 1 Reel Size 330mm Tape Width 12mm Quantity 2500 units www.fairchildsemi.com ©2007 Fairchild Semiconductor Corporation FDFS6N548 Rev.B FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C VDS = 24V, VGS = 0V TJ = 125°C VGS = ±20V, VDS = 0V 30 22 1 250 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On-Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C VGS = 10V, ID = 7A VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A, TJ = 125°C VDS = 5V, ID = 7A 1.2 1.8 -5 19 23 26 20 23 30 31 S mΩ 2.5 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 525 100 65 0.8 700 133 100 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDS = 15V, ID = 7A VGS = 10V VDD = 15V, ID = 7A VGS = 10V, RGEN = 6Ω 6 2 14 2 9 1.5 2 12 10 25 10 13 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 7A IF = 7A, di/dt = 100A/µs (Note2) 0.90 23 14 1.25 35 21 V ns nC Schottky Diode Characteristics VR IR Reverse Breakdown Voltage Reverse Leakage IR = 1mA VR = -10V IF = -100mA VF Forward Voltage IF = -2A TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 30 39 18 225 140 364 290 450 280 mV 250 V µA mA FDFS6N548 Rev.B 2 www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimun pad 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 1mH, IAS = 5.0A, VDD = 27V, VGS = 10V. FDFS6N548 Rev.B 3 www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted VGS = 10V VGS = 4.5V VGS = 3.5V VGS = 4V VGS = 3V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) 3.0 2.5 2.0 1.5 1.0 0.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 10V VGS = 4V VGS = 4.5V VGS = 3V VGS = 3.5V 25 20 15 10 5 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0 5 10 15 20 25 30 ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 60 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) ID = 7A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -75 ID = 7A VGS = 10V 50 40 TJ = 150oC 30 TJ = 25oC 20 10 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On-Resistance vs Junction Temperature 30 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VDD = 5V Figure 4. On-Resistance vs Gate to Source Voltage 60 VGS = 0V 25 ID, DRAIN CURRENT (A) 20 15 10 1 TJ = 25oC TJ = 25oC 0.1 0.01 TJ = 150oC TJ = -55oC 10 5 0 TJ = 150oC TJ = -55oC 0 1 2 3 VGS, GATE TO SOURCE VOLTAGE (V) 4 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDFS6N548 Rev.B 4 www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 7A 1000 Ciss VDD = 15V 8 6 VDD = 10V CAPACITANCE (pF) Coss 4 2 0 VDD = 20V 100 f = 1MHz VGS = 0V Crss 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 40 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 8 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 8 7 6 5 4 3 2 TJ = 125oC TJ = 25oC 6 VGS = 10V 4 VGS = 4.5V 2 RθJA = 78 C/W o 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 20 0 25 50 75 100 125 o 150 TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 50 ID, DRAIN CURRENT (A) Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 300 P(PK), PEAK TRANSIENT POWER (W) VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 – T A ---------------------125 TA = 25oC 10 100us 100 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TA = 25oC 1ms 10ms 100ms 1s 10s DC 10 0.1 1 0.5 -4 10 SINGLE PULSE -3 -2 -1 0 1 2 3 0.01 0.1 1 10 80 10 VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 10 t, PULSE WIDTH (s) 10 10 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDFS6N548 Rev.B 5 www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted IF , FORWARD LEAKAGE CURRENT (A) 10 IR , REVERSE LEAKAGE CURRENT (mA) 30 10 TJ = 125oC 1 1 TJ = 125oC 0.1 0.1 0.01 TJ = 25oC 0.01 TJ = 25oC 0.001 0.0 0.4 0.8 1.2 1.6 VF , FORWARD VOLTAGE (V) 2.0 0.001 0 5 10 15 20 VR , REVERSE VOLTAGE (V) Figure 13. Schottky Diode Forward Characteristics 2 Figure 14. Schottky Diode Reverse Characteristics 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 3E-3 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve FDFS6N548 Rev.B 6 www.fairchildsemi.com FDFS6N548 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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