Integrated P-Channel PowerTrench MOSFET and Schottky Diode

FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode December 2006 FDFMA2P029Z –20V, –3.1A, 95mΩ Features MOSFET Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with very low onstate resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Max rDS(on) = 95mΩ at VGS = –4.5V, ID = –3.1A Max rDS(on) = 141mΩ at VGS = –2.5V, ID = –2.5A Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant Pin 1 A NC D A1 NC 2 D3 MicroFET 2X2 C G S 6C 5G 4S www.DataSheet4U.com MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG VRRM IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings –20 ±12 –3.1 -6 1.4 0.7 –55 to +150 20 2 Units V V A W °C V A Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 86 140 °C/W Package Marking and Ordering Information Device Marking .P29 Device FDFMA2P029Z Package MicroFET 2X2 1 Reel Size 7” Tape Width 8mm Quantity 3000 units www.fairchildsemi.com ©2006 Fairchild Semiconductor Corporation FDFMA2P029Z Rev.B FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = –250μA, VGS = 0V ID = –250μA, referenced to 25°C VDS = –16V, VGS = 0V VGS = ±12V, VDS = 0V –20 –12 –1 ±10 V mV/°C μA μA On Characteristics VGS(th) ΔVGS(th) ΔTJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On-Resistance Forward Transconductance VGS = VDS, ID = –250μA ID = –250μA, referenced to 25°C VGS = –4.5V, ID = –3.1A VGS = –2.5V, ID = –2.5A VGS = –4.5V, ID = –3.1A,TJ =125°C VDS = –10V, ID = –3.1A –0.6 –1.0 4 60 88 87 –11 95 141 140 S mΩ –1.5 V mV/°C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = –10V, VGS = 0V, f = 1MHz 540 120 100 720 160 150 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = –10V, ID = –3.1A VGS = –4.5V VDD = –10V, ID = –1A VGS = –4.5V, RGEN = 6Ω 13 11 37 36 7 1.1 2.4 24 20 59 58 10 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = –1.1A (Note 2) –0.8 25 9 –1.1 –1.2 A V ns nC IF = –3.1A, di/dt = 100A/μs Schottky Diode Characteristics VR IR Reverse Voltage Reverse Leakage IR = 1mA VR = 20V IF = 500mA VF Forward Voltage IF = 1A TJ = 25°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 20 30 10 0.32 0.21 0.37 0.28 300 45 0.37 0.26 0.435 0.33 V V μA mA FDFMA2P029Z Rev.B 2 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJCis guaranteed by design while RθJA is determined by the user's board design. (a) MOSFET RθJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) MOSFET RθJA = 173°C/W when mounted on a minimum pad of 2 oz copper (c) Schottky RθJA = 86oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB. (d) Schottky RθJA = 140oC/W when mounted on a minimum pad of 2 oz copper. a)86oC/W when mounted on a 1in2 pad of 2 oz copper. b)173oC/W when mounted on a minimum pad of 2 oz copper. c)86oC/W when mounted on a 1in2 pad of 2 oz copper. d)140oC/W when mounted on a minimum pad of 2 oz copper. 2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% FDFMA2P029Z Rev.B 3 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS = -2.0V VGS = -4.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 -ID, DRAIN CURRENT (A) 2.6 VGS =-2.0V 5 4 3 2 1 0 0.0 2.2 1.8 1.4 1.0 0.6 PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VGS = -4.5V VGS = -3.0V VGS = -2.5V VGS = -1.5V VGS = -3.5V VGS = -2.5V VGS = -3.0V 0.5 1.0 1.5 2.0 0 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) 2 3 4 -ID, DRAIN CURRENT(A) 5 6 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = -3.1A VGS = -4.5V ID = -1.55A PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX 160 120 TJ = 125oC 80 TJ = 25oC 40 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On-Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 1 TJ = 125oC VGS = 0V 6 5 4 3 2 1 TJ = 25oC PULSE DURATION = 300μs DUTY CYCLE = 2.0%MAX VDD= -5V -ID, DRAIN CURRENT (A) TJ = 125oC TJ = -55oC 0.1 0.01 0.001 TJ = 25oC TJ = -55oC 0 0.0 0.5 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.0001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDFMA2P029Z Rev.B 4 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 IDD = -3.1A 1000 Ciss 8 6 4 2 0 VDD = -15V VDD = -10V CAPACITANCE (pF) VDD = -5V Coss 100 f = 1MHz VGS = 0V Crss 0 2 4 6 8 10 Qg, GATE CHARGE(nC) 12 14 50 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics P(PK), PEAK TRANSIENT POWER (W) 20 10 -ID, DRAIN CURRENT (A) Figure 8. Capacitance Characteristics 50 40 30 20 10 0 -4 10 SINGLE PULSE SINGLE PULSE o RθJA = 173 C/W TA=25 C o rDS(on) LIMIT 100us 1ms 10ms 1 0.1 VGS=-4.5V SINGLE PULSE R θJA =173 o C/W TA = 25oC 100ms 1s 10s DC 0.01 0.1 1 10 60 10 -3 -VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 10 t, PULSE WIDTH (s) -2 -1 0 1 10 2 10 3 Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 10 IF, FORWARD CURRENT(A) TJ = 125oC IR, REVERSE LEAKAGE CURRENT (mA) 100 TJ = 125oC 1 10 1 0.1 0.01 0.001 0.1 TJ = 85oC TJ = 85oC 0.01 TJ = 25oC TJ = 25oC 0.001 0 200 400 600 VF, FORWARD VOLTAGE(mV) 800 0 5 10 15 20 VR, REVERSE VOLTAGE (V) 25 30 Figure 11. Schottky Diode Forward Voltage Figure 12. Schottky Diode Reverse Current FDFMA2P029Z Rev.B 5 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 0.005 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDFMA2P029Z Rev.B 6 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode FDFMA2P029Z Rev.B 7 www.fairchildsemi.com FDFMA2P029Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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