Integrated P-Channel PowerTrench MOSFET and Schottky Diode

FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode October 2006 FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20V, -3A, 150mΩ Features Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A Low Gate Charge (3.4nC typ) Compact industry standard SuperSOTTM-6 package General Description The FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Significant improvement of Thermal Characteristics and Power Dissipation via replacement of independently connected Schottky with internal connection of Schottky Diode Cathode pn to P-Channel PowerTrench MosFET Drain pin. Schottky: VF < 0.45 V at IF = 1A RoHS Compliant C/D www.DataSheet4U.com 4 5 6 3 2 1 G S A C/D C/D PIN 1 SuperSOTTM-6 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Schotty Repetitive Peak Reverse Voltage Schotty Average Forward Current Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) (Note 1a) Ratings -20 ±12 -3 -6 1.5 0.8 20 1 -55 to +150 Units V V A W V A °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 87 166 °C/W Package Marking and Ordering Information Device Marking .100 Device FDFC2P100 Package SSOT-6 Reel Size 7” Tape Width 8mm Quantity 3000units ©2006 Fairchild Semiconductor Corporation FDFC2P100 Rev.C (W) 1 www.fairchildsemi.com FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C VGS = 0V, VDS = -16V VGS = ±12V, VDS = 0V -20 -12 -1 ±100 V mV/°C µA µA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On-Resistance Forward Transconductance VGS = VDS, ID = -250µA ID = -250µA, referenced to 25°C VGS = -4.5V, ID = -3.0A VGS = -2.5V, ID = -2.2A VGS = -4.5V, ID = -3.0A, TJ = 125°C VDS = -5V, ID = -3.0A -0.6 -0.9 3 95 150 130 5.4 150 200 252 S mΩ -1.5 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz f = 1MHz 335 80 40 6 445 105 60 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at -10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VGS = 0V to -10V VDD = -4.5V ID = -3.0A VDD = -10V, ID = -3.0A VGS = -4.5V, RGEN = 6Ω 9 11 12 4 3.4 0.9 1.0 16 20 22 8 4.7 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain tio Source Diode forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.2A (Note 2) -0.8 17 5 -1.2 -1.2 A V ns nC IF = -3.0A, di/dt = 100A/µs Schottky Diode Characteristics VR = 20V IR Reverse Leakage VR = 10V IF = 500mA VF Forward Voltage IF = 1A TJ = 25°C TJ = 100C TJ = 25°C TJ = 100°C TJ = 25°C TJ = 100°C TJ = 25°C TJ = 100°C 26 2.7 23 2.5 0.31 0.24 0.37 0.3 400 20 200 10 0.4 0.35 0.45 0.42 V µA mA µA mA FDFC2P100 Rev.C (W) 2 www.fairchildsemi.com FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. a) 87°C/W when mounted on a 1in2 pad of 2 oz copper b) 166°C/W when mounted on a minimun pad 2: Pulse Test: Pulse Width <300 ms, Duty Cycle < 2.0% FDFC2P100 Rev.C (W) 3 www.fairchildsemi.com FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 VGS =-4.5V 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 1 2 3 4 -ID, DRAIN CURRENT(A) VGS = -4.5V VGS = -3.5V VGS = -3.0V VGS = -2.5V VGS = -2.0V PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX -ID, DRAIN CURRENT (A) 5 4 3 2 1 0 0.0 VGS = -3.5V VGS = -3.0V VGS = -2.5V VGS = -2.0V PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 0.5 1.0 1.5 2.0 2.5 5 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 0.40 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (OHM) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = -3A VGS = -4.5V 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1 ID = -1.5A PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX TJ = 125oC TJ = 25oC -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 3. Normalized On- Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0V 6 5 4 3 2 1 0 0.5 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX -ID, DRAIN CURRENT (A) VDD = - 5V 1 TJ = 125oC 0.1 TJ = 25oC 0.01 1E-3 1E-4 0.0 TJ = 125oC TJ = 25oC TJ = 55oC TJ = -55oC 1.0 1.5 2.0 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 3.0 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDFC2P100 Rev.C (W) 4 www.fairchildsemi.com FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = - 3A 500 VDD = - 5V 4 3 2 1 0 0.0 400 VDD = -10V VDD = -15V f = 1MHz VGS = 0V Ciss CAPACITANCE (pF) 300 200 Coss 100 Crss 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0 Qg, GATE CHARGE(nC) 5 10 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage IR, REVERSE LEAKAGE CURRENT(A) IF, FORWARD LEAKAGE CURRENT (A) 1 TJ = 125oC 0.1 TJ = 125 C o 0.1 TJ = 100oC 0.01 0.01 TJ = 25oC 1E-3 TJ = 100 C o 1E-3 1E-4 TJ = 25 C o 1E-4 0.0 1E-5 0.1 0.2 0.3 VF, FORWARD VOLTAGE (V) 0.4 0 5 10 15 20 VR, REVERSE VOLTAGE(V) Figure 9. Schottky Diode Forward Voltage 1 DUTY CYCLE-DESCENDING ORDER Figure 10. Schottky Diode Reverse Current NORMALIZED THERMAL IMPEDANCE, ZθJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 SINGLE PULSE 1E-3 -5 10 10 -4 10 -3 10 10 10 t, RECTANGULAR PULSE DURATION (s) -2 -1 0 10 1 10 2 10 3 Figure 11. Transient Thermal Response Curve FDFC2P100 Rev.C (W) 5 www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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