N-Channel MOSFET

FDD6N25 / FDU6N25 250V N-Channel MOSFET February 2007 FDD6N25 / FDU6N25 250V N-Channel MOSFET Features • 4.4A, 250V, RDS(on) = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D G S D-PAK FDD Series I-PAK G D S FDU Series G S www.DataSheet4U.com Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDD6N25 / FDU6N25 250 4.4 2.6 18 ±30 45 4.4 5 4.5 50 0.4 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --- Max 2.5 110 Unit °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD6N25 / FDU6N25 Rev. A FDD6N25 / FDU6N25 250V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDD6N25 FDD6N25 FDU6N25 Device FDD6N25TM FDD6N25TF FDU6N25TU Package D-PAK D-PAK I-PAK Reel Size 380mm 380mm - Tape Width 16mm 16mm - Quantity 2500 2000 70 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 2.2A VDS = 40V, ID = 2.2A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 250 ------ Typ. -0.25 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.9 5.5 5.0 1.1 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---194 38 5 250 50 8 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 200V, ID = 6A VGS = 10V (Note 4, 5) (Note 4, 5) VDD = 125V, ID = 6A RG = 25Ω -------- 10 25 7 12 4.5 1.5 1.8 30 60 24 34 6 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3.7mH, IAS = 4.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 4.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 4.4A VGS = 0V, IS = 6A dIF/dt =100A/µs (Note 4) ------ ---145 0.55 4.4 18 1.4 --- A A V ns µC 2 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 1 150 C 25 C -55 C * Notes : 1. VDS = 40V 2. 250µs Pulse Test o o o 10 0 10 -1 * Notes : 1. 250µs Pulse Test 2. TC = 25 C o 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 6 RDS(ON) [Ω], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 5 4 10 1 VGS = 10V 3 2 VGS = 20V 1 * Note : TJ = 25 C o 150oC 25 C o * Notes : 1. VGS = 0V 2. 250µs Pulse Test 0 2 4 6 8 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 400 350 300 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 Coss Ciss VGS, Gate-Source Voltage [V] 10 VDS = 50V VDS = 125V VDS = 200V Capacitances [pF] 250 200 150 100 50 0 -1 10 8 6 Crss * Note : 1. VGS = 0 V 2. f = 1 MHz 4 2 * Note : ID = 6A 10 0 10 1 0 0 1 2 3 4 5 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 2.2 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 5 10 1 100 µs 4 ID, Drain Current [A] 10 0 Operation in This Area is Limited by R DS(on) 10 ms 100 ms DC ID, Drain Current [A] 1 ms 3 2 10 -1 * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 1 10 -2 10 0 10 1 10 2 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response 10 0 D = 0 .5 0 .2 0 .1 0 .0 5 PDM t1 t2 * N o te s : 1 . Z θ J C ( t) = 2 .5 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) o 10 -1 0 .0 2 0 .0 1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 4 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Mechanical Dimensions D-PAK 7 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Mechanical Dimensions I-PAK 8 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. 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