N-Channel MOSFET

FDD4243 40V P-Channel PowerTrench® MOSFET FDD4243 40V P-Channel PowerTrench® MOSFET -40V, -14A, 44mΩ Features General Description Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A High performance trench technology for extremely low rDS(on) RoHS Compliant November 2006 This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. Application Inverter Power Supplies S G S D www.DataSheet4U.com G D O -2 52 T -PA K (TO -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25°C (Note 1a) (Note 3) TC= 25°C TC= 25°C TA= 25°C (Note 1) (Note 1a) Ratings -40 ±20 -14 -24 -6.7 -60 84 42 3 -55 to +150 mJ W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 3.0 40 °C/W Package Marking and Ordering Information Device Marking FDD4243 Device FDD4243 Package D-PAK(TO-252) Reel Size 13’’ Tape Width 12mm Quantity 2500 units ©2006 Fairchild Semiconductor Corporation FDD4243 Rev.C 1 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C VDS = -32V, VGS = 0V TJ = 125°C VGS = ±20V, VGS = 0V -40 -32 -1 -100 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250µA ID = -250µA, referenced to 25°C VGS = -10V, ID = -6.7A VGS = -4.5V, ID = -5.5A VGS = -10V, ID = -6.7A, TJ = 125°C VDS = -5V, ID = -6.7A -1 -1.6 4.7 36 48 53 16 44 64 69 S mΩ -3 V mV/°C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 1165 165 90 4 1550 220 135 pF pF pF Ω Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = -20V, ID = -6.7A VGS = -10V VDD = -20V, ID = -6.7A VGS = -10V, RGEN = 6Ω 6 15 22 7 21 3.4 4 12 26 35 14 29 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -6.7A (Note 2) 0.86 29 30 1.2 43 44 V ns nC IF = -6.7A, di/dt = 100A/µs Notes: 1: RθJA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJC is determined by the user’s board design. a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V. FDD4243 Rev.C 2 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 60 -ID, DRAIN CURRENT (A) 3.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.0V 50 40 30 20 10 0 0 VGS = -10V VGS = - 6V VGS = -5V 3.0 2.5 2.0 1.5 1.0 0.5 VGS = -4.5V VGS = -4V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = - 3.0V VGS = -4V VGS = -4.5V VGS = -5V VGS = -6V VGS = -10V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 5 0 10 20 30 40 -ID, DRAIN CURRENT(A) 50 60 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 120 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = -6.7A VGS = -10V ID = -6.7A 100 80 60 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = 125oC TJ = 25oC 40 20 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 2 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 30 VGS = 0V 60 50 40 30 20 10 0 1 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 10 TJ = 150oC TJ = 25oC TJ = 150oC TJ = 25oC TJ = -55oC 1 TJ = -55oC 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 0.1 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD4243 Rev.C 3 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = -6.7A 3000 VDD = -10V 8 6 4 2 0 CAPACITANCE (pF) 1000 Ciss VDD = -20V VDD = -30V Coss 100 50 0.1 f = 1MHz VGS = 0V Crss 0 4 8 12 16 20 24 Qg, GATE CHARGE(nC) 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 25 -ID, DRAIN CURRENT (A) 20 15 10 5 RθJC = 3.0 C/W o 10 -IAS, AVALANCHE CURRENT(A) 8 6 4 TJ = 25oC VGS = -10V Limited by Package VGS = -4.5V 2 TJ = 125oC 1 0.01 0.1 1 tAV, TIME IN AVALANCHE(ms) 10 30 0 25 50 75 100 125 o 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 FOR TEMPERATURES 100 -ID, DRAIN CURRENT (A) 100us VGS = -10V ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 – T C ---------------------125 TC = 25oC 10 1000 I = I25 1ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25OC 10ms 100ms 100 SINGLE PULSE 0.1 0.5 1 10 100 30 -5 10 10 -4 -VDS, DRAIN to SOURCE VOLTAGE (V) 10 10 10 t, PULSE WIDTH (s) -3 -2 -1 10 0 10 1 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDD4243 Rev.C 4 www.fairchildsemi.com FDD4243 40V P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.003 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD4243 Rev.C 5 www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet co