N-Channel MOSFET

FDB14N30 300V N-Channel MOSFET FDB14N30 300V N-Channel MOSFET Features • 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 17 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description February 2007 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D G D2-PAK G S FDB Series www.DataSheet4U.com S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDB14N30 300 14 8.4 56 ±30 330 14 14 4.5 140 1.12 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA* RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Min. ---- Max. 0.89 40 62.5 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDB14N30 Rev. A FDB14N30 300V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDB14N30 Device FDB14N30TM Package D2-PAK TC = 25°C unless otherwise noted Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA ID = 250μA, Referenced to 25°C VDS = 300V, VGS = 0V VDS = 240V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 7A VDS = 40V, ID = 7A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 300 -----3.0 ------ Typ. -0.3 -----0.24 10.5 815 150 17 20 105 30 75 18 4.5 8 Max Units --1 10 100 -100 5.0 0.29 -1060 195 25 50 120 70 160 25 --V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 150V, ID = 14A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 240V, ID = 14A VGS = 10V -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 14A VGS = 0V, IS = 14A dIF/dt =100A/μs (Note 4) ------ ---235 1.6 14 56 1.4 --- A A V ns μC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2.8mH, IAS = 14A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 14A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB14N30 Rev. A 2 www.fairchildsemi.com FDB14N30 300V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] 10 1 ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 1 150 C 25 C o o 10 0 -55 C * Notes : 1. VDS = 40V 2. 250μs Pulse Test o 10 -1 * Notes : 1. 250μs Pulse Test 2. TC = 25 C -1 o 10 0 2 4 6 8 10 12 10 10 0 10 1 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.3 RDS(ON) [Ω], Drain-Source On-Resistance 1.2 10 2 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 5 10 15 20 25 30 * Note : TJ = 25 C o VGS = 10V IDR, Reverse Drain Current [A] 1.1 10 1 VGS = 20V 150oC 25 C o * Notes : 1. VGS = 0V 2. 250μs Pulse Test 35 40 45 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 2000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 Coss VGS, Gate-Source Voltage [V] 10 VDS = 60V VDS = 150V VDS = 240V Capacitances [pF] 8 Ciss 1000 6 Crss * Note : 1. VGS = 0 V 2. f = 1 MHz 4 2 * Note : ID = 14A 0 -1 10 10 0 10 1 0 0 2 4 6 8 10 12 14 16 18 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDB14N30 Rev. A 3 www.fairchildsemi.com FDB14N30 300V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 7 A 0.9 * Notes : 1. VGS = 0 V 2. ID = 250μA 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 15 10 2 10 μs 100 μs ID, Drain Current [A] 10 1 1 ms 10 ms 100 ms DC ID, Drain Current [A] o o 10 10 0 Operation in This Area is Limited by R DS(on) 5 10 -1 * Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 10 -2 10 0 10 1 10 2 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve PDM t1 10 0 t2 D = 0 .5 0 .2 ZθJC(t), Thermal Response PDM t1 t2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 * N o te s : 10 -2 s in g le p u ls e 1 . Z θ J C ( t) = 0 .8 9 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) o 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] FDB14N30 Rev. A 4 www.fairchildsemi.com FDB14N30 300V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB14N30 Rev. A 5 www.fairchildsemi.com FDB14N30 300V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDB14N30 Rev. A 6 www.fairchildsemi.com FDB14N30 300V N-Channel MOSFET Mechanical Dimensions D2-PAK FDB14N30 Rev. 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