N-Channel MOSFET

FDAF69N25 250V N-Channel MOSFET September 2005 UniFET FDAF69N25 250V N-Channel MOSFET Features • 34A, 250V, RDS(on) = 0.041Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 84 pF) • Fast switching • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switched mode power supplies. D G G D S TO-3PF FQAF Series www.DataSheet4U.com S Absolute Maximum Ratings Symbol VDSS VDS(Avalanche) ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Repetitive Avalanche Voltage Drain Current Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Parameter (Note 1) (Note 2) FDAF69N25 250 300 34 21.5 (Note 1) Unit V V A A A V mJ A mJ V/ns W W/°C °C °C - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed 136 ±30 (Note 2) (Note 1) (Note 1) (Note 3) 1894 34 11.5 4.5 115 0.93 -55 to +150 300 (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 1.08 -40 Unit °C/W °C/W °C/W ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDAF69N25 Rev. A FDAF69N25 250V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDAF69N25 Device FDAF69N25 Package TO-3PF Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 17A VDS = 40V, ID = 17A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 250 ------ Typ. -0.25 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.034 25 5.0 0.041 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---3570 750 84 4640 980 130 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time (Note 4, 5) VDD = 125V, ID = 69A RG = 25Ω ----- 95 855 130 220 77 24 37 200 1720 270 450 100 --- ns ns ns ns nC nC nC Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 200V, ID = 69A VGS = 10V (Note 4, 5) ---- Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.64mH, IAS = 69A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 34A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 34A VGS = 0V, IS = 69A dIF/dt =100A/µs (Note 4) ------ ---210 5.7 34 136 1.4 --- A A V ns µC 2 FDAF69N25 Rev. A www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : Figure 2. Transfer Characteristics 10 2 10 2 ID, Drain Current [A] ID, Drain Current [A] 150°C 1 10 1 10 25°C -55°C * Notes : 1. VDS = 40V 2. 250µs Pulse Test * Notes : 1. 250µs Pulse Test 2. TC = 25°C 10 0 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.10 RDS(ON) [Ω], Drain-Source On-Resistance 0.08 VGS = 10V 0.06 IDR, Reverse Drain Current [A] 10 2 10 1 VGS = 20V 0.04 * Note : TJ = 25°C 150°C 25°C * Notes : 1. VGS = 0V 2. 250µs Pulse Test 10 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 9000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 10 VDS = 50V VDS = 125V Capacitances [pF] 6000 Coss Ciss 8 VDS = 200V 6 3000 4 Crss * Note ; 1. VGS = 0 V 2. f = 1 MHz 2 * Note : ID = 69A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FDAF69N25 Rev. A www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 17 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 40 10 2 10 µs ID, Drain Current [A] 1 ms 10 1 Operation in This Area is Limited by R DS(on) 10 ms 100 ms DC ID, Drain Current [A] 100 µs 30 20 10 -1 10 0 10 1 Figure 11. Transient Thermal Response Curve 10 0 Zθ JC Thermal Response (t), D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 PDM t1 t2 N o te s : 1 . Z θ J C = 1 .0 8 (t) /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z θ JC (t) s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 4 FDAF69N25 Rev. A ℃ 0 .0 1 ※ 0 .0 2 10 0 10 1 ℃ VDS, Drain-Source Voltage [V] ※ 10 0 Notes : o o 10 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 10 2 0 25 50 75 100 125 150 TC, Case Temperature [ ] www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform 12V 200nF VGS 3mA VGS RG DUT 10V RG 10V tp FDAF69N25 Rev. A Ω Ω 300nF 50K Same Type as DUT VDS VGS Qg 10V Qgs Qgd DUT Charge Resistive Switching Test Circuit & Waveforms VDS RL VDD VDS 90% VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID VDD DUT VDD BVDSS IAS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD ID (t) VDS (t) tp Time 5 www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 FDAF69N25 Rev. A www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET Mechanical Dimensions TO-3PF 5.50 ±0.20 4.50 ±0.20 15.50 ±0.20 ø3.60 ±0.20 3.00 ±0.20 (1.50) 10.00 ±0.20 10 ° 26.50 ±0.20 23.00 ±0.20 16.50 ±0.20 14.50 ±0.20 0.85 ±0.03 16.50 ±0.20 2.00 ±0.20 1.50 ±0.20 14.80 ±0.20 2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 0.75 –0.10 +0.20 2.00 ±0.20 2.50 ±0.20 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.90 –0.10 +0.20 3.30 ±0.20 2.00 ±0.20 5.50 ±0.20 Dimensions in Millimeters 7 FDAF69N25 Rev. A 22.00 ±0.20 www.fairchildsemi.com FDAF69N25 250V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUI