N-Channel MOSFET

FDAF62N28 280V N-Channel MOSFET October 2006 FDAF62N28 280V N-Channel MOSFET Features • 36A, 280V, RDS(on) = 0.051Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 83 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G D S TO-3PF FDAF Series www.DataSheet4U.com S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDAF62N28 280 36 22 144 ±30 1919 36 16.5 4.5 165 1.3 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min. --- Max. 0.75 40 Unit °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDAF62N28 Rev. A FDAF62N28 280V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDAF62N28 Device FDAF62N28 Package TO-3PF TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 280V, VGS = 0V VDS = 224V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 18A VDS = 40V, ID = 18A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 280 -----3.0 ------ Typ. -0.28 -----0.043 51 3560 730 83 90 560 110 220 77 25 41 Max Units --1 10 100 -100 5.0 0.051 -4630 950 120 190 1130 230 450 100 --V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 140V, ID = 62A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 224V, ID = 62A VGS = 10V -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 36A VGS = 0V, IS = 62A dIF/dt =100A/µs (Note 4) ------ ---236 6.1 36 144 1.4 --- A A V ns µC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2.4mH, IAS = 36A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 36A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDAF62N28 Rev. A 2 www.fairchildsemi.com FDAF62N28 280V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 2 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 10 2 10 1 150 C 10 1 o 25 C o -55 C Notes : 1. VDS = 40V 2. 250µ s Pulse Test o 10 0 Notes : 1. 250µ s Pulse Test 2. TC = 25 -1 10 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.10 0.09 0.08 0.07 0.06 RDS(ON) [Ω ], Drain-Source On-Resistance VGS = 10V IDR, Reverse Drain Current [A] 10 2 VGS = 20V 0.05 0.04 Note : TJ = 25 10 1 150 25 Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0.03 0 25 50 75 100 125 150 175 200 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 12 9000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics VGS, Gate-Source Voltage [V] 10 VDS = 56V VDS = 140V VDS = 224V Coss Capacitances [pF] 6000 8 Ciss 6 3000 4 Crss Note ; 1. VGS = 0 V 2. f = 1 MHz 2 Note : ID = 62A 0 -1 10 0 10 0 10 1 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDAF62N28 Rev. A 3 www.fairchildsemi.com FDAF62N28 280V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 18 A 0.9 Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 40 10 2 10 µs 100 µs 1 ms 10 ms 100 ms Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 30 10 1 DC ID, Drain Current [A] 20 10 0 Notes : 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 10 10 -2 10 0 10 1 10 2 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ ] Figure 11. Transient Thermal Response Curve 10 0 D =0.5 Zθ JC Thermal Response (t), 0.2 10 -1 0.1 0.05 0.02 0.01 N otes : 1. Z θ JC = 0.75 (t) /W M ax. 2. D uty F actor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) PDM single pulse 10 -2 t1 t2 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t 1 , S quare W ave P ulse D uration [sec] FDAF62N28 Rev. A 4 www.fairchildsemi.com FDAF62N28 280V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDAF62N28 Rev. A 5 www.fairchildsemi.com FDAF62N28 280V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDAF62N28 Rev. A 6 www.fairchildsemi.com FDAF62N28 280V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PF 5.50 ±0.20 4.50 ±0.20 15.50 ±0.20 ø3.60 ±0.20 3.00 ±0.20 (1.50) 10.00 ±0.20 10 ° 26.50 ±0.20 23.00 ±0.20 16.50 ±0.20 14.50 ±0.20 0.85 ±0.03 16.50 ±0.20 2.00 ±0.20 1.50 ±0.20 14.80 ±0.20 2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 0.75 –0.10 +0.20 2.00 ±0.20 2.50 ±0.20 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.90 –0.10 +0.20 3.30 ±0.20 2.00 ±0.20 5.50 ±0.20 Dimensions in Millimeters FDAF62N28 Rev. A 7 22.00 ±0.20 www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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