N-Channel MOSFET

FDA70N20 200V N-Channel MOSFET UniFET FDA70N20 200V N-Channel MOSFET Features • 70A, 200V, RDS(on) = 0.035Ω @VGS = 10 V • Low gate charge ( typical 66 nC) • Low Crss ( typical 89 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-3P G DS FDA Series www.DataSheet4U.com S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDA70N20 200 70 45 280 ±30 1742 70 41.7 4.5 417 3.3 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 0.3 -40 Unit °C/W °C/W °C/W ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDA70N20 Rev. A FDA70N20 200V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDA70N20 Device FDA70N20 Package TO-3P TC = 25°C unless otherwise noted Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250µA ID = 250µA, Referenced to 25°C VDS = 200V, VGS = 0V VDS = 160V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250µA VGS = 10V, ID = 35A VDS = 40V, ID = 35A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min. 200 -----3.0 ------ Typ. -0.2 -----0.029 47 3050 750 89 71 235 65 39 66 19 26 Max Units --1 10 100 -100 5.0 0.035 -3970 980 130 150 480 140 88 86 --V V/°C µA µA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 100V, ID = 70A RG = 25Ω (Note 4, 5) ------(Note 4, 5) VDS = 160V, ID = 70A VGS = 10V -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 70A VGS = 0V, IS = 70A dIF/dt =100A/µs (Note 4) ------ ---175 4.1 70 280 1.4 --- A A V ns µC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.533mH, IAS = 70A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 70A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA70N20 Rev. A 2 www.fairchildsemi.com FDA70N20 200V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V Bottom : 6.0 V Top : Figure 2. Transfer Characteristics 10 2 10 2 ID, Drain Current [A] ID, Drain Current [A] 150 C o o 10 1 10 1 25 C -55 C o 10 0 ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test 10 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.06 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [Ω ],Drain-Source On-Resistance 0.05 VGS = 10V 0.04 IDR, Reverse Drain Current [A] 10 2 10 1 150℃ VGS = 20V 25℃ 0.03 ※ Note : TJ = 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0 25 50 75 100 125 150 175 200 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 8000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 6000 Coss Ciss VGS, Gate-Source Voltage [V] 10 VDS = 40V VDS = 100V VDS = 160V Capacitances [pF] 8 4000 6 2000 Crss ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 4 2 ※ Note : ID = 70A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 60 70 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDA70N20 Rev. A 3 www.fairchildsemi.com FDA70N20 200V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 3.0 Figure 8. On-Resistance Variation vs. Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) 1.1 Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 ? Notes : 1. VGS = 10 V 2. ID = 35 A 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Safe Operating Area 10 3 Figure 10. Maximum Drain Current vs. Case Temperature 80 10 µs 10 2 70 60 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 DC Operation in This Area is Limited by R DS(on) 1 ms 10 ms 100 ms 50 40 30 20 10 0 25 10 0 10 -1 ? Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -2 10 0 10 1 10 2 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 11. Transient Thermal Response Curve Zθ JC Thermal Response (t), D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 10 -2 PDM t1 t2 0 .0 1 s in g le p u ls e 10 -4 ※ N o te s : 1 . Z θ J C t) = 0 .3 ℃ /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C t) ( 10 -5 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ] FDA70N20 Rev. A 4 www.fairchildsemi.com FDA70N20 200V N-Channel MOSFET Gate Charge Test Circuit & Waveform 50KΩ 12V 200nF 300nF Same Type as DUT VDS VGS 10V Qgs Qg VGS Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG VGS RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time FDA70N20 Rev. A 5 www.fairchildsemi.com FDA70N20 200V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS • dv/dt controlled by RG • ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FDA70N20 Rev. A 6 www.fairchildsemi.com FDA70N20 200V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters FDA70N20 Rev. A 7 www.fairchildsemi.com FDA70N20 200V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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