N-Channel MOSFET

FDA69N25 250V N-Channel MOSFET May 2006 UniFET FDA69N25 250V N-Channel MOSFET Features • • • • • 69A, 250V, RDS(on) = 0.041Ω @VGS = 10 V Low gate charge ( typical 77 nC) Low Crss ( typical 84pF) Fast switching Improved dv/dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G TO-3P G DS FDA Series www.DataSheet4U.com S Absolute Maximum Ratings Symbol VDSS VDS(Avalanche) ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Repetitive Avalanche Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) (Note 1) (Note 2) Parameter FDA69N25 250 300 69 44.2 276 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 1894 69 48 4.5 480 3.84 -55 to +150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FDA69N25 0.26 40 Units °C/W °C/W ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDA69N25 Rev. A FDA69N25 250V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDA69N25 Device FDA69N25 Package TO-3P Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS ∆BVDSS/ ∆TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TC = 25°C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 µA VGS = 10 V, ID = 34.5 A VDS = 40 V, ID = 34.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 250 ------ Typ -0.25 ----- Max Units --1 10 100 -100 V V/°C µA µA nA nA Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.034 25 5.0 0.041 -V Ω S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---3570 750 84 4640 980 130 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time (Note 4, 5) VDD = 125 V, ID = 69A, RG = 25 Ω ----- 95 855 130 220 77 24 37 200 1720 270 450 100 --- ns ns ns ns nC nC nC Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 200 V, ID = 69A, VGS = 10 V (Note 4, 5) ---- Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.64mH, IAS =69A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 69A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 69 A VGS = 0 V, IS = 69 A, dIF / dt = 100 A/µs (Note 4) ------ ---210 5.7 34 136 1.4 --- A A V ns µC 2 FDA69N25 Rev. A www.fairchildsemi.com FDA69N25 250V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : Figure 2. Transfer Characteristics 10 2 10 2 ID, Drain Current [A] ID, Drain Current [A] 150°C 25°C -55°C * Notes : 1. VDS = 40V 2. 250µs Pulse Test 10 1 10 1 * Notes : 1. 250µs Pulse Test 2. TC = 25°C 10 0 10 -1 10 0 10 1 10 0 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.10 RDS(ON) [Ω], Drain-Source On-Resistance 0.08 VGS = 10V 0.06 IDR, Reverse Drain Current [A] 10 2 10 1 VGS = 20V 0.04 * Note : TJ = 25°C 150°C 25°C * Notes : 1. VGS = 0V 2. 250µs Pulse Test 10 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 9000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 10 VDS = 50V VDS = 125V Capacitances [pF] 6000 Coss Ciss 8 VDS = 200V 6 3000 4 Crss * Note ; 1. VGS = 0 V 2. f = 1 MHz 2 * Note : ID = 69A 0 -1 10 0 10 0 10 1 0 10 20 30 40 50 60 70 80 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FDA69N25 Rev. A www.fairchildsemi.com FDA69N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250µA 0.5 * Notes : 1. VGS = 10 V 2. ID = 34.5 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [°C] TJ, Junction Temperature [°C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 80 10 3 10 µs 10 2 70 60 100 µs ID, Drain Current [A] ID, Drain Current [A] 10 1 1ms 10ms 100ms DC Operation in This Area is Limited by R DS(on) 50 40 30 20 10 0 25 10 0 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 10 -2 10 0 10 1 10 2 50 75 100 o 125 150 VDS, Drain-SourceVoltage[V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 Z? JC Thermal Response (t), D=0.5 10 -1 0.2 0.1 0.05 10 -2 PDM t1 t2 * Notes : 0 1. ZθJC(t) = 0.26 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.02 0.01 single pulse -5 -4 -3 -2 10 10 10 10 10 -1 10 0 10 1 t1, Square Wave Pulse Duration [sec] 4 FDA69N25 Rev. A www.fairchildsemi.com FDA69N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDA69N25 Rev. A www.fairchildsemi.com FDA69N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDA69N25 Rev. A www.fairchildsemi.com FDA69N25 250V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters 7 FDA69N25 Rev. A www.fairchildsemi.com FDA69N25 250V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET® VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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