N-Channel MOSFET

FDA15N65 650V N-Channel MOSFET UniFET FDA15N65 650V N-Channel MOSFET Features • 16A, 650V, RDS(on) = 0.44Ω @VGS = 10 V • Low gate charge ( typical 48.5 nC) • Low Crss ( typical 23.6 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability January 2007 TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-3PN G DS FDA Series www.DataSheet4U.com S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDA15N65 650 16 9.6 64 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W/°C °C °C 637 16 26 4.5 260 2.1 -55 to +150 300 (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min. -0.24 -- Max. 0.48 -40 Unit °C/W °C/W °C/W ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDA15N65 Rev. A FDA15N65 650V N-Channel MOSFET Package Marking and Ordering Information Device Marking FDA15N65 Device FDA15N65 Package TO-3PN TC = 25°C unless otherwise noted Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA, TJ = 25°C ID = 250μA, Referenced to 25°C VDS = 650V, VGS = 0V VDS = 520V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 650 -----3.0 ------ Typ -0.65 -----0.36 19.2 2380 295 23.6 65 125 105 65 48.5 14.0 21.2 Max Units --1 10 100 -100 5.0 0.44 -3095 385 35.5 140 260 220 140 63.0 --V V/°C μA μA nA nA V Ω S pF pF pF ns ns ns ns nC nC nC On Characteristics Dynamic Characteristics Switching Characteristics VDD = 325V, ID = 15A RG = 21.7Ω (Note 4, 5) ------(Note 4, 5) VDS = 520V, ID = 15A VGS = 10V -- Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 16A VGS = 0V, IS = 15A dIF/dt =100A/μs (Note 4) ------ ---496 5.69 16 64 1.4 --- A A V ns μC 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4.6mH, IAS = 16A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA15N65 Rev. A 2 www.fairchildsemi.com FDA15N65 650V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 Figure 2. Transfer Characteristics 2 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID, Drain Current [A] 10 1 10 1 150 C 25 C -55 C * Notes : 1. VDS = 40V 2. 250μs Pulse Test o o o 10 0 * Notes : 1. 250μs Pulse Test 2. TC = 25 C o 10 -1 10 0 10 -1 10 0 10 1 2 4 6 8 10 12 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.0 RDS(ON) [Ω], Drain-Source On-Resistance 0.8 0.6 VGS = 10V IDR, Reverse Drain Current [A] 10 1 0.4 150 C 25 C o o VGS = 20V 0.2 * Note : TJ = 25 C o * Notes : 1. VGS = 0V 2. 250μs Pulse Test 0.0 10 0 0 10 20 30 40 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 12 VGS, Gate-Source Voltage [V] 4000 Coss Ciss Crss = Cgd 10 VDS = 130V VDS = 325V VDS = 520V Capacitances [pF] 8 3000 6 2000 * Note ; 1. VGS = 0 V 2. f = 1 MHz 4 1000 Crss 2 * Note : ID = 15A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FDA15N65 Rev. A 3 www.fairchildsemi.com FDA15N65 650V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 μA RDS(ON), (Normalized) RDS(ON), On-Resistance Drain-Source(Normalized) Drain-Source On-Resistance 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 * Notes : * Notes : = 10 V 1. VGS 1.2. I = 5.5 V VGS = 10 A D 2. ID = 8 A 0.5 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 0.0 -100 -100 -50 -50 00 50 50 100 100 o 150 150 200 200 TJ, Junction Temperature [ C] Junction Temperature o C] TT,J,Junction Temperature [[ C] J Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 18 10 2 10 μs 15 ID, Drain Current [A] 100 μs 10 1 10 0 Operation in This Area is Limited by R DS(on) 1 ms 10 ms 100 ms DC ID, Drain Current [A] 3 12 9 * Notes : 6 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 3 10 -2 10 0 10 1 10 2 10 0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 ZθJC(t), Thermal Response D = 0 .5 10 -1 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 * N o te s : PDM t1 t2 o 10 -2 s in g le p u ls e 1 . Z θ J C ( t) = 0 .4 8 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FDA15N65 Rev. A 4 www.fairchildsemi.com FDA15N65 650V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA15N65 Rev. A 5 www.fairchildsemi.com FDA15N65 650V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDA15N65 Rev. A 6 www.fairchildsemi.com FDA15N65 650V N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA15N65 Rev. 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