N-Channel MOSFET

FCB11N60F 600V N-Channel MOSFET SuperFET FCB11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns ) • Ultra low gate charge (typ. Qg = 40nC) • Low effective output capacitance (typ. Coss.eff = 95pF) • 100% avalanche tested May 2006 TM tm Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D D G G S D2-PAK FCB Series www.DataSheet4U.com S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FCB11N60F 600 11 7 33 ± 30 340 11 12.5 50 125 1.0 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA* RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient FCB11N60F 1.0 40 62.5 Unit °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCB11N60F Rev. A1 FCB11N60F 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCB11N60F Device FCB11N60FTM Package D -PAK TC = 25°C unless otherwise noted Reel Size 330mm Tape Width 24m Quantity 800 2 Electrical Characteristics Symbol Off Characteristics BVDSS ΔBVDSS / ΔTJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Conditions VGS = 0V, ID = 250μA, TJ = 25°C VGS = 0V, ID = 250μA, TJ = 150°C ID = 250μA, Referenced to 25°C VGS = 0V, ID = 11A VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250μA VGS = 10V, ID = 5.5A VDS = 40V, ID = 5.5A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -------3.0 ----------(Note 4, 5) Typ -650 0.6 700 -----0.32 9.7 1148 671 63 35 95 34 98 119 56 40 7.2 21 ---120 0.8 Max Units ----10 100 100 -100 5.0 0.38 -1490 870 ---80 205 250 120 52 --11 33 1.4 --V V V/°C V μA μA nA nA V Ω S pF pF pF pF pF ns ns ns ns nC nC nC A A V ns μC On Characteristics Dynamic Characteristics VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 11A RG = 25Ω Switching Characteristics --------- VDS = 480V, ID = 11A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 11A VGS = 0V, IS = 11A dIF/dt =100A/μs (Note 4) -- 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 5.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 11A, di/dt ≤ 1200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCB11N60F Rev. A1 2 www.fairchildsemi.com FCB11N60F 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 1 ID , Drain Current [A] 10 1 150 C o 10 0 10 0 25 C o -55 C o 10 -1 * Notes : 1. 250 μs Pulse Test o 2. TC = 25 C * Note 1. VDS = 40V 2. 250 μs Pulse Test 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.8 IDR , Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance VGS = 10V 0.6 10 1 0.4 VGS = 20V 10 0 150 C o 25 C * Notes : 1. VGS = 0V 2. 250 μs Pulse Test o 0.2 * Note : TJ = 25 C o 0.0 0 5 10 15 20 25 30 35 40 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 6000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 12 VDS = 100V 5000 VGS, Gate-Source Voltage [V] 10 VDS = 250V VDS = 400V Capacitance [pF] 4000 8 3000 Coss * Notes : 1. VGS = 0 V 2. f = 1 MHz 6 2000 Ciss Crss 4 1000 2 * Note : ID = 11A 0 -1 10 10 0 10 1 0 0 5 10 15 20 25 30 35 40 45 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] FCB11N60F Rev. A1 3 www.fairchildsemi.com FCB11N60F 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 1.1 2.0 1.0 1.5 0.9 Notes : 1. VGS = 0 V 2. ID = 250μA 1.0 * Notes : 1. VGS = 10 V 2. ID = 5.5 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 12.5 10 2 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 1 ms 10 ms DC ID, Drain Current [A] 3 10 1 100 us 10.0 7.5 10 0 5.0 10 -1 * Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 2.5 10 -2 10 0 10 1 10 2 10 0.0 25 50 75 100 o 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 D = 0 .5 ZθJC(t), Thermal Response 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e * N o te s : o 1 . Z θ JC (t) = 1 .0 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) PDM t1 t2 10 0 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t 1 , S q u a re W a ve P u ls e D u ra tio n [s e c ] FCB11N60F Rev. A1 4 www.fairchildsemi.com FCB11N60F 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCB11N60F Rev. A1 5 www.fairchildsemi.com FCB11N60F 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCB11N60F Rev. A1 6 www.fairchildsemi.com FCB11N60F 600V N-Channel MOSFET Mechanical Dimensions D2-PAK (0.40) 9.90 ±0.20 4.50 ±0.20 1.30 –0.05 +0.10 1.20 ±0.20 9.20 ±0.20 15.30 ±0.30 1.40 ±0.20 2.00 ±0.10 0.10 ±0.15 2.40 ±0.20 2.54 ±0.30 9.20 ±0.20 www.fairchildsemi.com 4.90 ±0.20 (0.75) 1.27 ±0.10 2.54 TYP 0.80 ±0.10 2.54 TYP 10.00 ±0.20 (8.00) (4.40) 0° ~3 ° +0.10 0.50 –0.05 10.00 ±0.20 15.30 ±0.30 (1.75) (2XR0.45) 0.80 ±0.10 Dimensions in Millimeters FCB11N60F Rev. A1 7 4.90 ±0.20 (7.20) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FAST® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. 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