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PD - 91811 IRFB9N60A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 600V G S RDS(on) = 0.75Ω ID = 9.2A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. www.DataSheet4U.com TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 9.2 5.8 37 170 1.3 ± 30 290 9.2 17 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.75 ––– 62 Units °C/W www.irf.com 1 10/7/98 IRFB9N60A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD www.DataSheet4U.com Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance … LS Ciss Coss Crss Coss Coss Coss eff. Min. Typ. Max. Units Conditions 600 ––– ––– V VGS = 0V, I D = 250µA ––– 0.66 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.75 Ω VGS = 10V, I D = 5.5A „ 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 5.5 ––– ––– S VDS = 25V, ID = 5.5A ––– ––– 25 VDS = 600V, VGS = 0V µA ––– ––– 250 VDS = 480V, VGS = 0V, T J = 150°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V ––– ––– 49 ID = 9.2A ––– ––– 13 nC VDS = 400V ––– ––– 20 VGS = 10V, See Fig. 6 and 13 „ ––– 13 ––– VDD = 300V ––– 25 ––– ID = 9.2A ns ––– 30 ––– RG = 9.1Ω ––– 22 ––– RD = 35.5Ω,See Fig. 10 „ D Between lead, 4.5 ––– ––– 6mm (0.25in.) nH G from package ––– 7.5 ––– and center of die contact S ––– 1400 ––– VGS = 0V ––– 180 ––– VDS = 25V ––– 7.1 ––– pF ƒ = 1.0MHz, See Fig. 5 ––– 1957 ––– VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz ––– 49 ––– VGS = 0V, V DS = 480V, ƒ = 1.0MHz ––– 96 ––– VGS = 0V, V DS = 0V to 480V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 9.2 showing the A G integral reverse ––– ––– 37 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 9.2A, VGS = 0V „ ––– 530 800 ns TJ = 25°C, IF = 9.2A ––– 3.0 4.4 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 6.8mH RG = 25Ω, IAS = 9.2A. (See Figure 12) ƒ ISD ≤ 9.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C 2 www.irf.com IRFB9N60A 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V TOP 10 1 4.7V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 4.7V 20µs PULSE WIDTH TJ = 150 °C 1 10 100 0.1 0.1 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics www.DataSheet4U.com Fig 2. Typical Output Characteristics 100 3.0 ID = 9.2A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 10 TJ = 150 ° C 2.0 1.5 TJ = 25 ° C 1 1.0 0.5 0.1 4.0 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFB9N60A 2400 20 2000 VGS , Gate-to-Source Voltage (V) V GS C is s C rss C o ss = = = = 0V, f = 1M H z C g s + C g d , Cd s S H O R TE D C gd C ds + C gd ID = 9.2A 400V VDS = 480V VDS = 300V VDS = 120V 16 C , Capacitance (pF ) C iss 1600 C oss 1200 12 8 800 400 C rss 4 0 1 10 100 1000 A 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 V D S , D rain-to-S ource V oltage (V ) Q G , Total Gate Charge (nC) www.DataSheet4U.com Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10 I D , Drain Current (A) 100 TJ = 150 ° C 10us 10 100us 1ms 1 10ms 1 TJ = 25 ° C 0.1 0.2 V GS = 0 V 0.5 0.7 1.0 1.2 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 10 100 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFB9N60A 10.0 VDS VGS RD 8.0 D.U.T. + RG I D , Drain Current (A) -VDD 6.0 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS www.DataSheet4U.com Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB9N60A 600 EAS , Single Pulse Avalanche Energy (mJ) TOP 500 1 5V BOTTOM ID 4.1A 5.8A 9.2A VDS L D R IV E R 400 RG 20V tp D .U .T IA S 300 + V - DD A 0 .0 1Ω 200 Fig 12a. Unclamped Inductive Test Circuit 100 0 25 50 75 100 125 150 V (B R )D SS tp www.DataSheet4U.com Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFB9N60A Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ‚ - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD www.DataSheet4U.com Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFB9N60A Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .5 4 (.415 ) 10 .2 9 (.405 ) 3.7 8 ( .14 9 ) 3.5 4 ( .13 9 ) -A 6 .4 7 (.2 55 ) 6 .1 0 (.2 40 ) -B4 .6 9 (.1 85 ) 4 .2 0 (.1 65 ) 1.32 (.05 2) 1.22 (.04 8) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1 .1 5 (.0 4 5) M IN 1 2 3 L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 1 4.09 (.55 5) 1 3.47 (.53 0) 4 .0 6 (.160 ) 3 .5 5 (.140 ) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0 .9 3 (.0 37 ) 0 .6 9 (.0 27 ) M BAM 3X 0.55 (.02 2) 0.46 (.01 8) 0.36 (.0 14 ) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O L LIN G D IM E N S IO N : INC H 2.92 (.11 5) 2.64 (.10 4) 3 O U TL IN E C O N F O R MS TO J E D E C O U T L IN E TO -2 20 A B . 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . www.DataSheet4U.com Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE PART NU MBER IR F 10 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey R