Power MOSFET

SHINDENGEN VX-2 Series Power MOSFET N-Channel Enhancement type (F12F50VX2) 500V 12A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. APPLICATION Switching power supply of AC 100V input High voltage power supply Inverter 2SK2475 OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) www.DataSheet4U.com RATINGS œAbsolute Maximum Ratings iTc = 25Žj Item Symbol Conditions Storage Temperature Tstg Tch Channel Temperature VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Continuous Drain CurrentiDCj IDP Continuous Drain CurrentiPeak) Continuous Source CurrentiDCj IS Total Power Dissipation PT IAS Single Pulse Avalanche Current Tch = 25Ž Vdis Terminals to case, AC 1 minute Dielectric Strength TOR i Recommended torque : 0.3N¥m j Mounting Torque Ratings -55`150 150 500 }30 12 36 12 50 12 2 0.5 Unit Ž V A W A ‹u NE VX-2 Series Power MOSFET œElectrical Characteristics Tc = 25Ž Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tran]conductance gfs Static Drain-Source On-]tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage Æjc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions 2SK2475 ( F12F50VX2 ) Min. 500 3. 0 2. 5 Typ. Max. 250 }0. 1 0. 7 3. 5 1. 5 2. 5 Unit V ÊA S ¶ V Ž/L nC pF 130 280 ns ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = }30V, VDS = 0V ID = 6A, VDS = 10V ID = 6A, VGS = 10V ID = 1mA, VDS = 10V IS = 6A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 12A VDS = 10V, VGS = 0V, f = 1MHZ ID = 6A, VGS = 10V, RL = 25¶ 7. 6 0. 55 3. 0 42 1200 90 270 90 190 www.DataSheet4U.com 2SK2475 25 Tc = −55°C Transfer Characteristics 25°C 20 Drain Current ID [A] 100°C 15 150°C 10 www.DataSheet4U.com 5 VDS = 25V pulse test TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2475 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 1 ID = 6A www.DataSheet4U.com 0.1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [°C] 2SK2475 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 www.DataSheet4U.com 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [°C] 2SK2475 100 Safe Operating Area 10 100µs Drain Current ID [A] 200µs R DS(ON) limit 1 www.DataSheet4U.com 1ms 10ms 0.1 DC Tc = 25°C Single Pulse 0.01 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2475 Transient Thermal Impedance 10 1 www.DataSheet4U.com Transient Thermal Impedance θjc(t) [°C/W] 0.1 0.01 10-4 10-2 10-3 10-1 100 101 102 Time t [s] 2SK2475 Capacitance Ciss 1000 Capacitance Ciss Coss Crss [pF] www.DataSheet4U.com Coss 100 Crss Tc=25°C TYP 10 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2475 100 Power Derating 80 Power Derating [%] 60 www.DataSheet4U.com 40 20 0 0 50 100 150 Case Temperature Tc [°C] 2SK2475 500 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 15 300 VDD = 400V 200V 100V 10 www.DataSheet4U.com VGS 200 5 100 ID = 12A 0 0 20 40 60 80 0 100 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 VDS