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EN25T80 Datasheet

8-Mbit Uniform Sector / Serial Flash Memory


EN25T80 Datasheet Preview


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EN25T80
EN25T80
8 Mbit Uniform Sector, Serial Flash Memory with Dual Data Mode
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
8 Mbit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
High performance
- 100MHz clock rate
- dual data mode
Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
Uniform Sector Architecture:
- 256 sectors of 4-Kbyte
- 16 blocks of 64-Kbyte
- Any sector or block can be
erased individually
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
High performance program/erase speed
- Page program time: 1.5ms typical
- Sector erase time: 150ms typical
- Block erase time 800ms typical
- Chip erase time: 10 Seconds typical
Lockable 256 byte OTP security sector
Minimum 100K endurance cycle
Package Options
- 8 pins SOP 200mil body width
- 8 pins PDIP
- 8 contact VDFN
- All Pb-free packages are RoHS compliant
Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN25T80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25T80 is designed to allow either single Sector at a time or full chip erase operation. The
EN25T80 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2006/11/6
Page 1

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Figure.1 CONNECTION DIAGRAMS
EN25T80
8 - LEAD SOP
Figure 2. BLOCK DIAGRAM
8 - CONTACT VDFN
This Data Sheet may be revised by subsequent versions
2
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2006/11/6
Page 2

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SIGNAL DESCRIPTION
EN25T80
Serial Data Input (DI)
The SPI Serial Data Input (DI) pin provides a means for instructions, addresses and data to be
serially written to (shifted into) the device. Data is latched on the rising edge of the Serial Clock (CLK)
input pin.
Serial Data Output (DO)
The SPI Serial Data Output (DO) pin provides a means for data and status to be serially read from
(shifted out of) the device. Data is shifted out on the falling edge of the Serial Clock (CLK) input pin.
Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See
SPI Mode")
Chip Select (CS#)
The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high the device
is deselected and the Serial Data Output (DO) pin is at high impedance. When deselected, the
devices power consumption will be at standby levels unless an internal erase, program or status
register cycle is in progress. When CS# is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the
device. After power-up, CS# must transition from high to low before a new instruction will be
accepted.
Hold (HOLD#)
The HOLD pin allows the device to be paused while it is actively selected. When HOLD is brought
low, while CS# is low, the DO pin will be at high impedance and signals on the DI and CLK pins will
be ignored (don’t care). The hold function can be useful when multiple devices are sharing the same
SPI signals.
Write Protect (WP#)
The Write Protect (WP#) pin can be used to prevent the Status Register from being written. Used
in conjunction with the Status Register’s Block Protect (BP0, BP1and BP2) bits and Status
Register Protect (SRP) bits, a portion or the entire memory array can be hardware protected.
Table 1. PIN Names
Symbol
CLK
DI
DO
CS#
WP#
HOLD#
Vcc
Vss
Pin Name
Serial Clock Input
Serial Data Input
Serial Data Output
Chip Enable
Write Protect
Hold Input
Supply Voltage (2.7-3.6V)
Ground
This Data Sheet may be revised by subsequent versions
3
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2006/11/6
Page 3

www.DataSheet4U.com
EN25T80
MEMORY ORGANIZATION
The memory is organized as:
z 1,048,576 bytes
z Uniform Sector Architecture
16 blocks of 64-Kbyte
256 sectors of 4-Kbyte
z 4096 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector,
Block or Chip Erasable but not Page Erasable.
This Data Sheet may be revised by subsequent versions
4
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2006/11/6
Page 4
Part Number EN25T80
Manufactur EON
Description 8-Mbit Uniform Sector / Serial Flash Memory
Total Page 30 Pages
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