N-Channel and P-Channel Silicon MOSFETs

www.DataSheet4U.com Ordering number : ENA0657 EMH2603 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2603 Features • General-Purpose Switching Device Applications • • The EMH2603 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. Nch: 2.5V drive. Pch: 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 30 ±10 0.15 0.6 0.6 1.2 150 --55 to +150 P-channel -20 ±10 --2 --8 1.1 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±8V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=80mA 30 1 ±10 0.4 0.13 0.22 1.3 V µA µA V S Symbol Conditions Ratings min typ max Unit Marking : FC Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22107PE TI IM TC-00000506 No. A0657-1/7 EMH2603 Continued from preceding page. Parameter Symbol RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0V ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1A ID=--1A, VGS=--4V ID=--0.5A, VGS=-2.5V ID=--0.3A, VGS=-1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-2A VDS=--10V, VGS=-4V, ID=-2A VDS=--10V, VGS=-4V, ID=-2A IS=--2A, VGS=0V --20 --1 ±10 --0.4 1.9 3.2 115 165 260 420 73 60 11.8 33 48 43 4.7 0.75 1.6 --0.83 --1.2 150 235 520 --1.4 Ratings min typ 2.9 3.7 6.4 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max 3.7 5.2 12.8 Unit Ω Ω Ω pF pF pF ns ns ns ns nC nC nC V V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Package Dimensions unit : mm (typ) 7045-005 Electrical Connection 8 7 6 5 0.2 0.2 0.125 8 5 1 0.5 2.0 0.2 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain1 7 : Drain1 8 : Drain1 1 2 3 4 1.7 2.1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain1 7 : Drain1 8 : Drain1 SANYO : EMH8 Top view 0.05 0.75 No. A0657-2/7 EMH2603 Switching Time Test Circuit [N-channel] [P-channel] VIN 0V --4V VIN ID= --1A RL=10Ω VDD= --10V VIN 4V 0V VIN VDD=15V ID=80mA RL=187.5Ω D PW=10µs D.C.≤1% Rg VOUT D PW=10µs D.C.≤1% VOUT G G P.G EMH2603 50Ω EMH2603 P.G 50Ω S S --8.0V --6.0V 0.16 0.14 0.12 0.10 0.08 ID -- VDS 3.0 V 2.5 3.5V 4.0V [Nch] --2.0 --1.8 --1.6 ID -- VDS --4.0V --3.0 V --2. 5V [Pch] 0V 2.0 Drain Current, ID -- A Drain Current, ID -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 6.0 V VGS=1.5V 0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 1.0 IT00029 --2 . V V . --1 8V --0.2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 VGS= --1.5V --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V 0.30 ID -- VGS Drain-to-Source Voltage, VDS -- V --2.0 --1.8 --1.6 IT10538 [Nch] ID -- VGS [Pch] VDS= --10V 0.25 Ta= --25 °C VDS=10V °C Drain Current, ID -- A Drain Current, ID -- A 75 °C 0.20 25 --1.4 --1.2 --1.0 --0.8 0.15 75 °C --2 5°C 25 0.05 °C --0.4 --0.2 0 2.0 2.5 3.0 IT00030 0 --0.5 Ta = Ta= 7 --1.0 0 0 0.5 1.0 1.5 25° C --1.5 5°C --0.6 --25°C 0.10 --2.0 --2.5 IT10539 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V No. A0657-3/7 EMH2603 10 RDS(on) -- VGS [Nch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 700 RDS(on) -- VGS [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 600 --0.5A 500 400 --1.0A ID= --0.3A 80mA ID=40mA 300 200 100 0 0 --2 --4 --6 --8 IT10540 Gate-to-Source Voltage, VGS -- V 10 IT00031 RDS(on) -- ID Gate-to-Source Voltage, VGS -- V 500 [Nch] VGS=4V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 400 5 Ta=75°C 3 300 25°C --25°C A I D= --0.3 --1.8V , V GS= 200 2 --2.5V , V GS= = --0.5A ID --4.0V , V GS= = --1.0A ID 100 1.0 0.01 2 3 5 7 0.1 2 3 5 IT00032 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Drain Current, ID -- A 10 Ambient Temperature, Ta -- °C 10 IT10541 RDS(on) -- ID [Nch] Forward Transfer Admittance, yfs -- S yfs -- ID VDS= --10V [Pch] VGS=2.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 7 5 3 2 5 Ta=75°C 25°C 3 --25°C 1.0 7 5 3 2 °C -25 =Ta °C 75 °C 25 2 1.0 0.01 2 3 5 7 0.1 2 3 5 IT00033 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 100 7 RDS(on) -- ID Drain Current, ID -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 5 7 --10 IT10542 [Nch] VGS=1.5V IS -- VSD [Pch] VGS=0V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 2 Source Current, IS -- A 3 25° C --0.7 5°C 7 5 3 2 --25°C 25°C 1.0 0.001 2 3 5 7 0.01 2 3 5 IT00034 --0.01 --0.4 --0.5 --0.6 Ta= 7 10 Ta=75°C --25 --0.8 --0.9 °C --1.0 --1.1 Drain Current, ID -- A Diode Forward Voltage, VSD -- V IT10543 No. A0657-4/7 EMH2603 7 RDS(on) -- Ta [Nch] 5 3 SW Time -- ID [Pch] VDD= --10V VGS= --4V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Switching Time, SW Time -- ns 6 2 100 7 5 3 2 5 4 3 4.0V 40m S= I D= A, VG 80m I D= G A, V 2. S= 5V td(off) tf 2 td(on) 10 7 5 tr 1 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Ambient Temperature, Ta -- °C 1.0 IT00035 yfs -- ID [Nch] VDS=10V 1000 7 5 Ciss, Coss, Crss -- VDS Drain Current, ID -- A IT10544 [Pch] f=1MHz Forward Transfer Admittance, yfs -- S 7 5 Ciss 2 -Ta= 25°C 75°C Ciss, Coss, Crss -- pF 3 3 2 25°C 0.1 7 5 3 2 100 7 5 3 Coss Crss 0.01 0.01 2 2 3 5 7 0.1 2 3 5 IT00036 0 --5 --10 --15 --20 IT10545 Drain Current, ID -- A 1.0 7 5 IS -- VSD Drain-to-Source Voltage, VDS -- V --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 [Nch] VGS=0V VGS -- Qg [Pch] Source Current, IS -- A 3 2 0.1 7 5 3 2 0.01 0.5 Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --2A 75 °C 25 °C --2 5°C Ta = 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00037 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Diode Forward Voltage, VSD -- V 1000 7 Total Gate Charge, Qg -- nC 2 --10 7 5 IT10546 SW Time -- ID Switching Time, SW Time -- ns 5 3 2 [Nch] VDD=15V VGS=4V ASO IDP= --8A [Pch] td(off) tf Drain Current, ID -- A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 100 7 5 3 2 tr PW≤10µs 1m 100 s µs ID=