N-Channel and P-Channel Silicon MOSFETs

www.DataSheet4U.com Ordering number : EN8732A EMH2602 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2602 Features • General-Purpose Switching Device Applications • The EMH2602 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions N-channel 30 ±20 3.5 14 1.0 1.2 150 --55 to +150 P-channel -30 ±20 --2 --8 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V ID=1A, VGS=4V 30 1 ±10 1.2 1.5 2.6 53 105 69 150 2.6 V µA µA V S mΩ mΩ Symbol Conditions Ratings min typ max Unit Marking : FB Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51607 TI IM TC-00000713 / O0406PA MS IM TC-00000044 No.8732-1/6 EMH2602 Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-1A ID=--1A, VGS=--10V ID=--0.5A, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-10V, ID=--2A VDS=--10V, VGS=-10V, ID=--2A VDS=--10V, VGS=-10V, ID=--2A IS=--2A, VGS=0V --30 --1 ±10 --1.2 1.3 2.2 115 215 285 65 52 8.4 15.5 29 25.5 6.7 1.1 1.05 --0.85 --1.2 150 310 --2.6 V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A VDS=10V, VGS=10V, ID=3.5A IS=3.5A, VGS=0V Ratings min typ 280 60 47 8.6 25.5 23.0 13.5 6.4 1.35 1.05 0.85 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7045-002 Electrical Connection 8 0.2 7 6 5 0.2 0.125 8 5 1 0.5 2.0 0.2 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 2 3 4 1.7 2.1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : EMH8 Top view 0.05 0.75 No.8732-2/6 EMH2602 Switching Time Test Circuit [N-channel] VIN 10V 0V VIN ID=2A RL=7.5Ω VDD=15V 0V --10V VIN ID= --1A RL=15Ω [P-channel] VIN VDD= --15V D PW=10µs D.C.≤1% VOUT PW=10µs D.C.≤1% D VOUT G G EMH2602 P.G 50Ω EMH2602 P.G 50Ω S S 3.5 ID -- VDS 15.0V 10.0 V [Nch] --2.0 --1.8 --1.6 ID -- VDS --15.0V --1 --6. -8.0V 0V --4 .0V [Pch] 5.0V 6.0V 3.0 0.0V 4.0 V --3.0V Drain Current, ID -- A 2.5 Drain Current, ID -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 2.0 3.0V 1.5 1.0 VGS= --2.5V 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VGS=2.5V 0 0.8 0.9 1.0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V 3.5 IT10596 ID -- VGS Drain-to-Source Voltage, VDS -- V --3.0 IT11523 [Nch] ID -- VGS [Pch] VDS=10V 3.0 --2.5 VDS= --10V Drain Current, ID -- A 2.5 Drain Current, ID -- A --2.0 2.0 --1.5 1.5 --1.0 25° --25 °C C 1.0 5°C Ta= 0 0 --0.5 --1.0 --1.5 --2.0 0.5 0 0 0.5 1.0 1.5 2.0 75 --0.5 --25 --2.5 --3.0 °C °C 25°C Ta= 7 2.5 3.0 3.5 4.0 --3.5 --4.0 Gate-to-Source Voltage, VGS -- V IT10597 Gate-to-Source Voltage, VGS -- V IT11524 No.8732-3/6 EMH2602 200 RDS(on) -- VGS [Nch] Ta=25°C 450 RDS(on) -- VGS --1.0A [Pch] Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 400 350 300 ID=1A 2A ID= --0.5A 250 200 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V 200 IT10598 RDS(on) -- Ta Gate-to-Source Voltage, VGS -- V 450 IT11525 [Nch] RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 160 140 120 100 80 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 180 400 350 300 250 200 150 100 50 0 --60 VG 1A, I D= 4V S= V = --4 VGS .5A, --0 I D= I D= = 2A, V GS 10V 10V , V S= -I D= --1.0A G --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 7 IT10599 Ambient Temperature, Ta -- °C 7 IT11526 yfs -- ID VDS=10V [Nch] yfs -- ID [Pch] VDS= --10V Forward Transfer Admittance, yfs -- S 5 3 2 Forward Transfer Admittance, yfs -- S 5 3 2 1.0 7 5 3 2 C 5° --2 °C = 75 Ta °C 25 1.0 7 5 3 2 Ta C 5° --2 = °C 75 25 °C 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 7 5 3 2 IT10600 IS -- VSD Drain Current, ID -- A 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IT11527 [Nch] VGS=0V IS -- VSD [Pch] VGS=0V Source Current, IS -- A 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 IT10601 Source Current, IS -- A --25 °C 25° C Ta= 7 --0.01 7 5 3 2 --0.001 --0.2 --0.4 Ta= 7 --0.6 --25° C --0.8 5°C 25°C 5°C --1.0 --1.2 IT11528 Diode Forward Voltage, VSD -- V Diode Forward Voltage, VSD -- V No.8732-4/6 EMH2602 5 3 SW Time -- ID [Nch] VDD=15V VGS=10V 5 3 SW Time -- ID [Pch] VDD= --15V VGS= --10V Switching Time, SW Time -- ns 100 7 5 3 2 10 7 5 3 2 1.0 0.01 Switching Time, SW Time -- ns 2 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.01 tf td(off) tf td(on) td(off) td(on) tr tr 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 2 3 5 7 --0.1 2 3 5 7 --1.0 5 Ciss, Coss, Crss -- VDS Ciss Drain Current, ID -- A IT10602 [Nch] f=1MHz 1000 7 Ciss, Coss, Crss -- VDS Drain Current, ID -- A IT11529 [Pch] f=1MHz 3 5 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 2 3 2 Ciss 100 7 5 100 7 5 Coss Crss Coss Crss 3 2 0 5 10 15 20 25 30 IT10603 3 2 0 --5 --10 --15 --20 --25 --30 IT11530 Drain-to-Source Voltage, VDS -- V 10 9 VGS -- Qg Drain-to-Source Voltage, VDS -- V --10 --9 [Nch] VGS -- Qg [Pch] Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 IT10604 Gate-to-Source Voltage, VGS -- V VDS=10V ID=3.5A VDS= --10V ID= --2A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 IT11531 Total Gate Charge, Qg -- nC 3 2 10 7 5 Total Gate Charge, Qg -- nC 2 --10 7 5 ASO IDP=14A 10 [Nch] ≤10µs ASO IDP= --8A [Pch] ≤10µs 10 0 1m µs s Drain Current, ID -- A Drain Current, ID -- A ID=3.5A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 DC 10 0 1m µs s op er ati 10 on m 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ID= --2A Operation in this area is limited by RDS(on). s (T a= 0m s DC 10 m op er 10 s ati 0m on s 25 °C ) Operation in this area is limited by RDS(on). (T a= 25 °C ) 0.01 0.01