Dual-chip Bipolar Transistor

www.DataSheet4U.com EMF33 Transistors Power management, Dual-chip Bipolar Transistor EMF33 Applications Power management circuit Dimensions (Unit : mm) EMT6 1.6 0.5 Features 1) DTB513Z (digital transistor) and 2SK3019 (MOS FET) are housed independently in the EMT6 package. 2) Power switching circuit in a single package. 3) Mounting cost and area can be cut in half. 1.0 0.5 0.5 (6) (5) (4) 1.6 1.2 1pin mark (1) (2) (3) 0.22 0.13 Each lead has same dimensions Abbreviated symbol : F33 Structure Epitaxial Plannar Silicon Transistor Packaging specifications Package Type EMF33 Tr1 Tr2 ∗2 Equivalent circuit Taping T2R 8000 (6) (5) ∗1 (4) Code Basic ordering unit (pieces) Absolute maximum ratings (Ta=25°C) R2 Parameter Supply voltage Input voltage Collector current ∗ Characteristics of built-in transistor. Symbol VCC VIN IC(max) ∗ Limits −12 −10 to +5 −500 Unit V V mA R1 (1) Emitter (2) Base (3) Drain (4) Source (5) Gate (6) Collector (1) (2) (3) ∗1 ESD protection diode ∗2 Body diode Tr1 : R1/R2=1kΩ/10kΩ Tr2 : MOS FET Parameter Drain-source voltage Gate-source voltage Drain current Continous Pulsed Continous Reverse drain current Pulsed Symbol VDSS VGSS ID IDP IDR IDRP ∗ ∗ Limits 30 ±20 100 200 100 200 Unit V V mA mA mA mA ∗ PW≤10ms DUTY CYCLE≤50% Parameter Power dissipation Junction temperature Range of storage temperature Symbol PD Tj Tstg ∗ Limits 150 120 150 −55 to +150 Unit mW / TOTAL mW / ELEMENT °C °C ∗ Each terminal mounted on a recommended land. 1/2 EMF33 Transistors Electrical characteristics (Ta=25°C) Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio ∗ Characteristics of built-in transistor. Symbol VI(off) VI(on) VO(on) II IO(off) GI fT ∗ R1 R2/R1 Min. − −2.5 − − − 140 − 0.7 8 Typ. − − −60 − − − 260 1 10 Max. −0.3 − −300 −6.4 −0.5 − − 1.3 12 Unit V V mV mA uA − − kΩ − Conditions VCC= −5V, IO= −100µA VO= −0.3V, IO= −20mA VO= −100mA, II= −5mA VI= −5V VCC= −12V, VI= 0V VO= −5V, IO= −100mA VCE= −10V, IE= 5mA, f=100MHz Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate-threshold voltage Static drain-source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) Min. − 30 − 0.8 − − 20 − − − − − − − Typ. − − − − 5 7 − 13 9 4 15 35 80 80 Max. ±1 − 1.0 1.5 8 13 − − − − − − − − Yfs Ciss Coss Crss td(on) tr td(off) tf Unit µA − µA V Ω Ω ms pF pF pF ns ns ns ns Conditions VGS= ±20V, VDS=0V ID= 10µA, VGS=0A VDS= 30V, VGS=0V VDS= 3V, ID=100µA ID= 10mA, VGS= 4V ID= 1mA, VGS= 2.5V VDS= 3V, ID= 10mA VDS= 5V VGS= 0V f=1MHz ID= 10mA VDD= 5V VGS= 5V RL= 500Ω RGS= 10Ω 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1