(EE-CT40/-CT20) Triac Photocoupler

www.DataSheet4U.com EE-CT20/-CT40 Dimensions Note: All units are in millimeters unless otherwise indicated. Terminal Arrangement (Top View) Triac Photocoupler Features • • • • • Low-power SSR of standard DIP construction. Switches an effective current of 200 mA. Ensures an AC insulation dielectric strength of 2.5 kV. Compact model with a small mounting area. OFF voltage (VDRM): 200 V (EE-CT20) and 400 V (EE-CT40) 20 or 40 7.62±0.25 Absolute Maximum Ratings (Ta = 25°C, RGT = 27 kΩ) Item Emitter Forward current Pulse forward current Reverse voltage Symbol IF IFP VR VDRM VRRM IT(RMS) ITSM VRGM Topr Tstg Tj Tsol Rated value 50 mA (see note 1) 1A (see note 2) 5V CT20: 200 V CT40: 400 V 2.5 min. 0.25±0.1 7.4 to 9.7 Detector Peak repetitive OFF voltage Peak repetitive reverse voltage Effective ON current 2.54±0.25 2.54±0.25 2.54±0.25 --200 mA (see note 1) 2A (see note 3) 5V –30°C to 100°C –55°C to 125°C 100°C 260°C (see note 4) Terminal No. 1 2 3 4 5 6 7 8 Name Anode (LED 1) Cathode (LED 1) Anode (LED 2) Cathode (LED 2) Gate (Photo-triac) T (Photo-thyristor) T (Photo-thyristor) Gate (Photo-triac) Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. 3 t mm v 6 6 t mm v 10 10 t mm v 18 18 t mm v 30 Tolerance ±0.3 ±0.375 ±0.45 ±0.55 ±0.65 Ambient temperature Surge ON current Peak gate reverse voltage Operating Storage Junction temperature Soldering temperature Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 µs maximum with a frequency of 100 Hz. 3. With a non-repetitive commercial half-sine current. 4. Complete soldering within 10 seconds. Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Forward voltage Reverse current OFF current (1) ON current (2) Reverse current (1) Reverse current (2) ON voltage Gate non-trigger voltage Hold current Critical OFF voltage rising rate Trigger LED current Insulation dielectric strength IR IRDM (1) IRDM (2) IRRM (1) IRRM (2) VTM VGD IH dv/dt IFT Viso Symbol VF Value 1.2 V typ., 1.35 V max. 10 µA max. 5 µA max. 100 µA max. 5 µA max. 100 µA max. 0.9 V typ., 1.3 V max. 0.4 V min. 0.2 mA typ., 1 mA max. 5 V/µs min., 10 V/µs typ. 1 mA min., 4 mA typ., 7 mA max. 2.5 kV AC min. IF = 30 mA VR = 5 V VDRM imposed VDRM imposed, Ta = 100°C VRRM imposed VRRM imposed, Ta = 100°C ITM = 100 mA VD = 6 V RL = 100 Ω VDRM imposed VD = 6 V, RL = 100 Ω Effective value, RH = 40% to 60% Condition 241 EE-CT20/-CT40 www.DataSheet4U.com Engineering Data Effective ON current I T (RMS) (mA) EE-CT20/-CT40 Forward Current vs. Ambient Temperature Characteristics Forward current I F (mA) Effective ON Current Temperature Characteristics Pulse Forward Current Characteristics LED pulse forward current (peak value) I FP (mA) Pulse width x 100 µs Ta = 25°C Ambient temperature Ta (°C) Ambient temperature Ta (°C) Duty cycle (%) Forward Current vs. Forward Voltage Characteristics (Typical) Forward Voltage vs. Ambient Temperature Characteristics (Typical) Trigger LED current (relative value) IFT IF = 50 mA IF = 30 mA IF = 20 mA IF = 10 mA IF = 5 mA Trigger LED Current vs. Ambient Temperature Characteristics (Typical) VD = 6 V, RL = 100 Ω RGK = 27 kΩ (EE-CT: RGT = 27 kΩ) 1: Ta = 25°C LED pulse forward current (peak value) I FP (mA) Ta = 25°C Forward voltage V F (V) Positive maximum change rate Negative maximum change rate Pulse forward voltage VFP (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Hold Current vs. Ambient Temperature Characteristics (Typical) Critical OFF Voltage Rising Rate vs. Ambient Temperature Characteristics (Typical) Critical OFF voltage rising rate dv/dt (V/ µs) Trigger LED current IFT (mA) VD = VDRM RGK = 27 KΩ Trigger LED Current vs. Resistance between Gate and Cathode Characteristics (Typical) Ta = 25°C VD = 6 V, RL = 100 Ω Hold current IH (mA) VD = 6V, RL = 100 Ω RGT = 4.7 KΩ RGT = 27 KΩ RGT = 10 KΩ Ambient temperature Ta (°C) Ambient temperature Ta (°C) Resistance (RGK) between gate and cathode (kΩ) Hold Current vs. Resistance between Critical OFF Voltage Rising Rate vs. Gate and Cathode Characteristics Resistance between Gate and (Typical) Cathode Characteristics (Typical) Turn ON Time ton ( µ s) Hold current I H (mA) Ta = 25°C VD = 6 V, RL = 100 Ω Turn ON Time vs. Forward Current Characteristics (Typical) Ta = 25°C VD = 6 V, RL = 100 Ω RGK = 27 KΩ Critical OFF voltage rising rate dv/dt (V/ µs) Ta = 25°C VD = VDRM Resistance (RGK) between gate and cathode (kΩ) Resistance (RGK) between gate and cathode (kΩ) Forward current IF (mA) 242