General Purpose Switching Device Applications

www.DataSheet4U.com Ordering number : ENN8398 EC4307KF P-Channel Silicon MOSFET EC4307KF Features • • • General-Purpose Switching Device Applications Low ON-resistance. 1.8V drive. mounting height : 0.4mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a glass-epoxy board Conditions Ratings --12 ±10 --1.1 --4.4 0.4 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-12V, VGS=0V VGS=±8V, VDS=0V VDS=-6V, ID=--1mA VDS=-6V, ID=--0.5A ID=--0.5A, VGS=-4.5V ID=--0.2A, VGS=-2.5V ID=--0.1A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --12 --10 ±10 --0.3 0.9 1.5 250 380 520 160 45 35 11 20 32 30 327 528 740 --1.0 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71505PE MS IM TB-00001648 No.8398-1/4 EC4307KF Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--6V, VGS=--4.5V, ID=-1.1A VDS=--6V, VGS=--4.5V, ID=-1.1A VDS=--6V, VGS=--4.5V, ID=-1.1A IS=--1.1A, VGS=0V Ratings min typ 2.6 0.25 0.65 --0.9 --1.2 max Unit nC nC nC V Package Dimensions unit : mm 7043-001 Top View 0.8 4 1.2 3 1 2 Polarity Discriminating Mark 0.4 0.5 0.2 0.3 1 0.75 2 4 Bottom View 3 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : ECSP1208-4-F Type No. Indication(Top view) Electrical Connection(Top view) Polarity mark (Top) JA Gate Drain Source *Electrodes : on the bottom Switching Time Test Circuit VDD= --6V 0V --4.5V VIN ID= --0.5A RL=12Ω VIN PW=10µs D.C.≤1% D VOUT G P.G 50Ω S EC4307KF No.8398-2/4 EC4307KF V V .5 -3.0 2.5V -Drain Current, ID -- A --1.5 --3 --1.2 Drain Current, ID -- A --0.9 --1.8 V --1.5V --0.6 --1.0 --0.5 --0.3 VGS= --1.0V 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 IT04353 800 0 --0.5 --1.0 Ta= 75° C 25° --25 C °C --1.5 Ta= --25 °C 25° 75°C C --2.0 --1.5 ID -- VDS --4 .5 V --2.0 ID -- VGS VDS= --6V --2.5 --3.0 IT04354 Drain-to-Source Voltage, VDS -- V 1000 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 900 800 700 600 500 400 300 200 100 0 --60 --0.5A 700 --0.2A 600 500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --0 I D= .8V = --1 , VGS .1A ID= --0.1A 0.2A I D= -- = --2.5 , V GS V .8A I D= --0 --4.5V , V GS= --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID IT09779 5 3 Ambient Temperature, Ta -- °C IT09780 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS= --6V 3 2 1.0 7 5 3 2 5 °C = Ta --2 C 5° Source Current, IS -- A 2 2 --1.0 7 5 7 5°C Ta=7 5°C 25°C --0.6 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.1 --0.4 --0.8 --25°C --1.0 --1.2 --1.4 IT04358 Drain Current, ID -- A 3 2 IT04357 5 3 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD= --6V VGS= --4.5V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 100 7 5 3 2 2 tr td(off) Ciss tf 100 7 5 3 2 td(on) 10 7 5 3 2 --0.1 Coss Crss 10 2 3 5 7 --1.0 2 3 0 --2 --4 --6 --8 --10 --12 IT04360 Drain Current, ID -- A IT04359 Drain-to-Source Voltage, VDS -- V No.8398-3/4 EC4307KF --4.5 --4.0 VGS -- Qg VDS= --6V ID= --1.1A Drain Current, ID -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 ASO IDP= --4.4A ≤10µs Gate-to-Source Voltage, VGS -- V --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT09781 1m ID= --1.1A 10 10 m s s DC 0m op s er ati on --0.01 --0.01 Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a glass-epoxy board 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Total Gate Charge, Qg -- nC 0.50 PD -- Ta Drain-to-Source Voltage, VDS -- V 5 7 --10 2 3 IT09782 Allowable Power Dissipation, PD -- W 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 M ou nt ed on ag las s-e po xy bo ar d Ambient Temperature, Ta -- °C IT09783 Note on usage : Since the EC4307KF is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2005. Specifications and information herein are subject to change without notice. PS No.8398-4/4