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DC COMPONENTS CO., LTD.
R
DXTB772
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage amplifier, voltage regulator, DC-DC converter and driver.
SOT-89
Pinning
1 = Base 2 = Collector 3 = Emitter
.066(1.70) .059(1.50) .063(1.60) .055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (pulse)(1) Total Power Dissipation(2) Total Power Dissipation(3) Total Power Dissipation(4) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD PD TJ TSTG Rating -40 -30 -5 -3 -7 1 2 1.5 +150 -55 to +150 Unit V V V A A W W W o C o C
.167(4.25) .159(4.05) 1 2 3 .102(2.60) .095(2.40)
.020(0.51) .014(0.36)
.060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40)
.016(0.41) .014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(5) Base-Emitter Saturation Voltage(5) DC Current Gain(5)
Transition Frequency Output Capacitance (1)Single pulse PW=1ms (2)When tested in free air condition, without heat sinking. (3)When mounted on a 40x40X1mm ceramic board. (4)Printed circuit board 2mm thick, collector plating 1cm square or larger. (5)Pulse Test: Pulse Width 380µs, Duty Cycle 2%.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob
Min -40 -30 -5 30 100 -
Typ -0.3 -1 160 80 55
Max -1 -1 -0.5 -2 500 -
Unit V V V µA µA V V MHz pF
Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-20mA, VCE=-2V IC=-1A, VCE=-2V IC=-100mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz
Classification of hFE2
Rank Range Q 100~200 P 160~320 E 250~500
