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DC COMPONENTS CO., LTD.
R
DXTA92
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone.
SOT-89
.066(1.70) .059(1.50) .063(1.60) .055(1.40)
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -300 -300 -5 -500 1 +150 -55 to +150 Unit V V V mA W
o o
.167(4.25) .159(4.05) 1 2 3
.102(2.60) .095(2.40)
.020(0.51) .014(0.36)
.060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40)
.016(0.41) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT Cob 380µs, Duty Cycle 2%
Min -300 -300 -5 25 40 25 50 -
Typ -
Max -250 -100 -0.5 -0.9 6
Unit V V V nA nA V V MHz pF
Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-200V VEB=-3V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-30mA, VCE=-10V VCE=-20V, IC=-10mA, f=100MHz VCB=-20V
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
