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DC COMPONENTS CO., LTD.
R
DXTA13
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for applications requiring extremely high current gain.
SOT-89
Pinning
1 = Base 2 = Collector 3 = Emitter
.066(1.70) .059(1.50)
.063(1.60) .055(1.40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC PD TJ TSTG Rating 30 30 10 300 1 +150 -55 to +150 Unit V V V mA W
o o
.167(4.25) .159(4.05) 1 2 3
.102(2.60) .095(2.40)
.020(0.51) .014(0.36)
.060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40)
.016(0.41) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCES BVEBO ICBO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle 2%
Min 30 30 10 5K 10K 125
Typ -
Max 100 100 1.5 2 -
Unit V V V nA nA V V MHz
Test Conditions IC=100µA, IE=0 IC=100µA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=10V, IC=0 IC=100mA, IB=0.1mA IC=100mA, VCE=5V IC=10mA, VCE=5V IC=100mA, VCE=5V VCE=5V, f=100MHz, IC=10mA
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width
