Triacs

www.DataSheet4U.com DTN1A60/80 Triacs / Sensitive Gate Features Repetitive Peak Off-State Voltage : 600/800V R.M.S On-State Current ( IT(RMS)= 1 A ) High Commutation dv/dt Symbol 3.T2 BVDRM = 600V / 800V IT(RMS) = 1 A 2.Gate ITSM = 9.1 A TO-92 1.T1 General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay where high sensitivity is required in all four quadrants. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG Parameter ( TJ = 25°C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz, Gate open TC = 58 °C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp = 10ms TC = 58 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C 1.0us Ratings 600 1.0 9.1/10 0.41 1.0 0.1 0.5 6.0 - 40 ~ 125 - 40 ~ 150 0.2 800 Units V A A A2s W W A V °C °C g Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. 1/6 www.DataSheet4U.com DTN1A60/80 Electrical Characteristics Ratings Symbol Items Conditions Min. IDRM VTM I+GT1 I -GT1 I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) Repetitive Peak Off-State Current Peak On-State Voltage I II Gate Trigger Current III IV I II Gate Trigger Voltage III IV Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Resistance Thermal Resistance Junction to case Junction to Ambient TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM VD = 6 V, RL=10 0.2 2.0 4.0 1.8 2.0 50 120 V V/ mA °C/W °C/W VD = 6 V, RL=10 7 5 12 1.8 1.8 V VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 1.5 A, Inst. Measurement Typ. Max. 0.5 1.6 5 5 mA mA V Unit Notes : 1. Pulse Width 300us , Duty cycle 2% 2/6 www.DataSheet4U.com DTN1A60/80 Fig 1. Gate Characteristics 10 1 Fig 2. On-State Voltage 10 1 VGM (6V) 25 10 0 PG(AV) (0.1W) IGM (0.5A) 25 I I I + GT1 _ GT1 _ GT3 I + GT3 On-State Current [A] Gate Voltage [V] PGM (1W) TJ = 125 C 10 0 o TJ = 25 C o VGD(0.2V) 10 -1 10 0 10 1 10 2 10 3 10 -1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation θ = 180o θ = 150 o θ = 120 o θ = 90 θ = 60 θ = 30 0.6 o o o Fig 4. On State Current vs. Allowable Case Temperature Allowable Case Temperature [ oC] 130 120 110 100 90 80 70 60 50 40 0.0 360° 2 1.5 Power Dissipation [W] 1.2 2 0.9 360° : Conduction Angle 0.3 : Conduction Angle θ θ θ θ θ θ = 30 o = 60 o = 90 o = 120 o = 150 o = 180 o 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.2 0.4 0.6 0.8 1.0 1.2 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 12 10 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 Surge On-State Current [A] V + GT1 _ GT1 + GT3 _ GT3 8 60Hz VGT (25 C) VGT (t C) o o V V 1 V 6 4 50Hz 2 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/6 www.DataSheet4U.com DTN1A60/80 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 3 Fig 8. Transient Thermal Impedance Transient Thermal Impedance [ C/W] Rθ (J-A) 10 2 I IGT (25 C) IGT (t oC) I 1 I + GT1 _ GT1 _ GT3 o o Rθ (J-C) 10 1 I + GT3 0.1 -50 10 0 0 50 100 o 150 10 -2 10 -1 10 0 10 1 10 2 10 3 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10 10 10 10 6V V A 6V A V 6V A V RG RG RG 6V V A RG Test Procedure Test Procedure Test Procedure Test Procedure 4/6 www.DataSheet4U.com DTN1A60/80 TO-92 Package Dimension mm Dim. Min. A B C D E F G H I J 0.33 2.54 2.54 0.48 0.013 4.43 4.43 14.07 Typ. 4.2 3.7 4.83 14.87 0.4 4.83 0.45 0.174 0.174 0.554 Max. Min. Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 Max. A E B F C G 1 D 2 3 1. T1 2. Gate 3. T2 J H I 5/6 www.DataSheet4U.com DTN1A60/80 TO-92 Package Dimension, Forming Dim. A B C D E F G H I J K L M N mm Min. Typ. 4.2 3.7 4.43 14.07 4.43 2.54 2.54 0.33 4.5 7.8 1.8 1.3 0.48 5.5 8.2 2.2 1.7 0.013 0.177 0.295 0.070 0.051 4.83 14.87 0.4 4.83 0.45 0.174 0.174 0.554 Max. Min. Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 0.216 0.323 0.086 0.067 Max. A E B F C N M G D 1 2 3 L 1. T1 2. Gate 3. T2 K H I J 6/6