Triacs



Part  Number DTF4A60
Manufacturer DnI
Semiconductor DataSheet

DataSheet View

www.DataSheet4U.com DTF4A60 UL No. E256958 Triac / Standard Gate Symbol Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) High Commutation dv/dt Isolation Voltage ( VISO = 2500V AC ) 2.T2 BVDRM = 600V IT(RMS) = 4 A 3.Gate 1.T1 ITSM = 44 A TO-220F General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, industrial and domestic lighting control and static switching relay. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz, Gate open TC = 99 °C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp = 10ms TC = 99 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C A.C. 1 minute 1.0us Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass Ratings 600 4.0 40/44 4.5 3 0.3 1.0 7.0 2500 - 40 ~ 125 - 40 ~ 150 2.0 Units V A A A2 s W W A V V °C °C g MAY 2005. Rev. 0 copyright@ D&I Semiconductor Co., Ltd., All rights reserved. 1/6 www.DataSheet4U.com DTF4A60 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 6 A, Inst. Measurement Ratings Min. Typ. Max. 1.0 1.6 20 Unit IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) mA V Gate Trigger Current VD = 6 V, RL=10 20 20 1.5 mA Gate Trigger Voltage VD = 6 V, RL=10 1.5 1.5 V Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -2.0 A/ms, VD=2/3 VDRM 0.2 5.0 5.0 V V/ mA 4.0 °C/W Junction to case Notes : 1. Pulse Width 300us , Duty cycle 2% 2/6 www.DataSheet4U.com DTF4A60 Fig 1. Gate Characteristics 10 2 Fig 2. On-State Voltage 10 1 VGM (7V) PGM (3W) On-State Current [A] 10 1 Gate Voltage [V] PG(AV) (0.3W) 25 10 0 125 C o IGM (1A) 10 0 25 C o VGD(0.2V) 10 -1 10 1 -1 10 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 5.5 Fig 4. On State Current vs. Allowable Case Temperature = 180 o = 150 o = 120 o = 90 o o o Power Dissipation [W] 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 360° 2 θ θ θ θ Allowable Case Temperature [ oC] 6.0 130 125 120 115 110 105 360° o : Conduction Angle θ = 60 θ = 30 2 θ = 30o θ = 60 o θ = 90 o θ = 120 o θ = 150 o θ = 180 100 95 0.0 : Conduction Angle 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 35 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 3 30 Surge On-State Current [A] X 100 (%) 25 60Hz V + GT1 - 20 V GT1 10 2 V GT3 VGT (t C) 15 10 5 1 0 0 10 o 50Hz VGT (25 C) 10 -50 o 10 1 10 2 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/6 www.DataSheet4U.com DTF4A60 Fig 7. Gate Trigger Current vs. Junction Temperature 10 3 Fig 8. Transient Thermal Impedance 10 I 10 2 I I + GT1 GT1 GT3 Transient Thermal Impedance [ C/W] IGT (25 C) IGT (t C) o o X 100 (%) o 1 10 1 -50 0 50 100 o 150 10 -2 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10 10 10 6V V A 6V A V 6V A V RG RG RG Test Procedure Test Procedure Test Procedure 4/6 www.DataSheet4U.com DTF4A60 TO-220F Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O 1 2 Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57 Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83 Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101 Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111 2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059 F B A E H I 1 C L 1 D 2 3 J K M 2 G 1. T1 2. T2 3. Gate N O 5/6 www.DataSheet4U.com DTF4A60 TO-220F Package Dimension, Forming mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O P 1 2 Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57 Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83 Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101 Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111 2.54 5.08 2.51 1.25 0.45 0.6 5.0 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024 0.100 0.200 0.103 0.061 0.025 0.039 0.197 0.146 0.126 0.059 F B A E H I 1 C L 1 2 3 N J K O P M 2 G D 1. T1 2. T2 3. Gate 6/6




English     |     日本語     |     漢語     |     한국어     |     Netherlands     |     La France     |     L'Italia     |     Deutschland     |     Россия
This is a individually operated, non profit site.
If this site is good enough to show, please introduce this site to others...

It welcomes all helping each other.     Tool Bar     |    Contact us     |     Link Exchange     |     Buy Components ?     |     Parts Cross Reference