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Part Number |
DTF4A60 |
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Manufacturer |
DnI |
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Semiconductor DataSheet |
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DataSheet View |
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DTF4A60
UL No. E256958
Triac / Standard Gate
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) High Commutation dv/dt Isolation Voltage ( VISO = 2500V AC )
2.T2
BVDRM = 600V IT(RMS) = 4 A
3.Gate
1.T1
ITSM = 44 A TO-220F
General Description
This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, industrial and domestic lighting control and static switching relay.
1
2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
Sine wave, 50 to 60 Hz, Gate open TC = 99 °C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp = 10ms TC = 99 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C A.C. 1 minute 1.0us
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass
Ratings
600 4.0 40/44 4.5 3 0.3 1.0 7.0 2500 - 40 ~ 125 - 40 ~ 150 2.0
Units
V A A A2 s W W A V V °C °C g
MAY 2005. Rev. 0 copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
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DTF4A60
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 6 A, Inst. Measurement
Ratings Min. Typ. Max.
1.0 1.6 20
Unit
IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c)
mA V
Gate Trigger Current
VD = 6 V, RL=10
20 20 1.5
mA
Gate Trigger Voltage
VD = 6 V, RL=10
1.5 1.5
V
Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance
TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -2.0 A/ms, VD=2/3 VDRM
0.2 5.0 5.0
V
V/
mA 4.0 °C/W
Junction to case
Notes : 1. Pulse Width 300us , Duty cycle 2%
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DTF4A60
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
10
1
VGM (7V)
PGM (3W)
On-State Current [A]
10
1
Gate Voltage [V]
PG(AV) (0.3W) 25
10
0
125 C
o
IGM (1A)
10
0
25 C
o
VGD(0.2V)
10
-1
10
1
-1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
5.5
Fig 4. On State Current vs. Allowable Case Temperature
= 180 o = 150 o = 120 o = 90
o o o
Power Dissipation [W]
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5
360°
2
θ θ θ θ
Allowable Case Temperature [ oC]
6.0
130 125 120 115 110 105
360°
o
: Conduction Angle
θ = 60 θ = 30
2
θ = 30o θ = 60 o θ = 90 o θ = 120 o θ = 150 o θ = 180
100 95 0.0
: Conduction Angle
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
35
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
3
30
Surge On-State Current [A]
X 100 (%)
25
60Hz
V
+ GT1 -
20
V GT1
10
2
V GT3
VGT (t C)
15
10
5
1
0 0 10
o
50Hz
VGT (25 C)
10 -50
o
10
1
10
2
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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DTF4A60
Fig 7. Gate Trigger Current vs. Junction Temperature
10
3
Fig 8. Transient Thermal Impedance
10
I
10
2
I I
+ GT1 GT1 GT3
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
X 100 (%)
o
1
10
1
-50
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
6V
V
A
6V
A V
6V
A V
RG
RG
RG
Test Procedure
Test Procedure
Test Procedure
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DTF4A60
TO-220F Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O 1 2
Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059
F B
A E
H
I
1
C L 1 D 2 3 J K M
2
G
1. T1 2. T2 3. Gate
N O
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DTF4A60
TO-220F Package Dimension, Forming mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O P 1 2
Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 5.0 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.197 0.146 0.126 0.059
F B
A E
H
I
1
C L 1 2 3 N J K O P M
2
G
D
1. T1 2. T2 3. Gate
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