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Part Number |
DTF16A80 |
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Manufacturer |
DnI |
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Semiconductor DataSheet |
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DataSheet View |
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DTF16A80
UL No. E256958
Triac / Standard Gate
Symbol
Features
Repetitive Peak Off-State Voltage : 800V R.M.S On-State Current ( IT(RMS)= 16 A ) High Commutation dv/dt Isolation Voltage ( VISO = 2500V AC )
2.T2
BVDRM = 800V IT(RMS) = 16 A
3.Gate
1.T1
ITSM = 170 A TO-220F
General Description
This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, industrial and domestic lighting control and static switching relay.
1
2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
Sine wave, 50 to 60 Hz,Gate Open TC = 68 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms TC =68 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C A.C. 1 minute 1.0us
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass
Ratings
800 16 155/170 120 5.0 0.5 2.0 10 2500 - 40 ~ 125 - 40 ~ 150 2.0
Units
V A A A2 s W W A V V °C °C g
MAY, 2005. Rev. 0 copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
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DTF16A80
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 25 A, Inst. Measurement
Ratings Min. Typ. Max.
2.0 1.4 30
Unit
IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c)
mA V
Gate Trigger Current
VD = 6 V, RL=10
30 30 1.5
mA
Gate Trigger Voltage
VD = 6 V, RL=10
1.5 1.5
V
Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance
TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -8.0 A/ms, VD=2/3 VDRM
0.2 10 25
V
V/
mA 3.0 °C/W
Junction to case
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DTF16A80
Fig 1. Gate Characteristics Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
10
2
Gate Voltage [V]
PGM (5W) PG(AV) (0.5W) 25
10
0
TJ = 125 C
o
10
1
IGM (2A)
TJ = 25 C
o
10
-1
VGD (0.2V)
1
10
0
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
20
o
Fig 4. On State Current vs. Allowable Case Temperature
130
18
Allowable Case Temperature [ C]
Power Dissipation [W]
16 14
360°
2
θ = 180 o θ = 150 o θ = 120 θ = 90 θ = 60 θ = 30
o o o
o
120 110 100
12
: Conduction Angle
10 8 6 4 2 0 0 2 4 6 8 10 12 14 16
θ = 30
90 80 70 60
2
o o
360°
: Conduction Angle
θ θ θ θ θ
10 12 14 16
= 60 o = 90 o = 120 o = 150 o = 180
18 20
18
20
0
2
4
6
8
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
200
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
Surge On-State Current [A]
150
60Hz
VGT (25 C)
VGT (t C)
V
1
100
o
o
_ GT3
50Hz
50
V V
+ GT1 _ GT1
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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DTF16A80
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
o
1
I
+ GT1
I I
0.1 -50
_ GT3
_ GT1
0
50
100
o
150
0.1 -2 10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
6V
V
A
6V
A V
6V
A V
RG
RG
RG
Test Procedure
Test Procedure
Test Procedure
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DTF16A80
TO-220F Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O 1 2
Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059
F B
A E
H
I
1
C L 1 D 2 3 J K M
2
G
1. T1 2. T2 3. Gate
N O
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DTF16A80
TO-220F Package Dimension, Forming mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O P 1 2
Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 5.0 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.197 0.146 0.126 0.059
F B
A E
H
I
1
C L 1 2 3 N J K O P M
2
G
D
1. T1 2. T2 3. Gate
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