NPN DIGITAL TRANSISTOR

www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD DTD123Y DIGITAL TRANSISTORS (BUILT-IN RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. NPN EPITAXIAL SILICON TRANSISTOR 3 2 1 SOT-23 EQUIVALENT CIRCUIT R1 IN R2 GND OUT 3 2 1 SOT-323 *Pb-free plating product number: DTD123YL IN GND OUT ORDERING INFORMATION Order Number Normal Lead Free Plating DTD123Y-AE3-6-R DTD123YL-AE3-6-R DTD123Y-AL3-6-R DTD123YL-AL3-6-R Note: G: GND I: Input O: Output DTD123YL-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating Package SOT-23 SOT-323 Pin Assignment 1 2 3 G I O G I O Packing Tape Reel Tape Reel (1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23, AL3: SOT-323 (4) L: Lead Free Plating, Blank: Pb/Sn MARKING DC3Y www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-087,A DTD123Y ABSOLUTE MAXIMUM RATING (Ta=25℃) NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Supply voltage VCC 50 V Input voltage VIN -5 ~ +12 V Output current IC 500 mA Power dissipation PD 200 mW Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL VIN(OFF) Input Voltage VIN(ON) Output Voltage VOUT(ON) Input Current IIN Output Current IO(OFF) DC Current Gain GI Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT * Transition frequency of the device PARAMETER TEST CONDITIONS VCC=5V, IOUT=100µA VOUT=0.3V, IOUT=20mA IO/II=50mA/2.5mA VIN=5V VCC=50V, VIN=0V VOUT=5V, IOUT=50mA MIN 2 0.1 0.3 3.6 0.5 2.86 5.5 TYP MAX 0.3 UNIT V V mA µA KΩ MHz 56 1.54 3.6 VCE=10V, IE= −50mA, f=100MHz * 2.2 4.5 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R206-087,A DTD123Y TYPICAL CHARACTERISTICS Fig.1 Input Voltage vs. Output Current (ON Characteristics) 100 50 20 10 5 2 1 500m 200m 100m 500µ1m 2m 5m 10m 20m 50m100m200m 500m Output current, IO (A) Fig.3 DC Current Gain vs. Output Current 1K VOUT=5V NPN EPITAXIAL SILICON TRANSISTOR Fig.2 Output Current vs. Input Voltage (OFF Characteristics) 10m 5m VCC=5V VOUT=0.3V Input Voltage, VIN(ON) (V) Output Current, IOUT (A) 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 0.5 1.0 1.5 2.0 2.5 3.0 Input Voltage, V I(OFF) (V) Fig.4 Output Voltage vs. Output Current 1 500m IO/II=20 Ta=100℃ 25℃ -40℃ Ta=-40℃ 25℃ 100℃ Ta=100℃ 25℃ -40℃ Dc Current Gain, GI 500 200 100 50 20 10 5 2 1 500µ Output Voltage : VOUT(ON) (V) Ta=100℃ 25℃ -40℃ 200m 100m 50m 20m 10m 5m 2m 5m10m20m50m100m200m500m Output Current, IOUT (A) 2m 1m 500µ 1m 2m 5m10m 20m50m100m200m500m Output Current, IOUT (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-087,A