NPN SILICON BIAS RESISTOR TRANSISTORS

DTC114EET1 SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–75/SOT–416 package which is designed for low power surface mount applications. http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC–75/SOT–416 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm, 7 inch/3000 Unit Tape & Reel MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc COLLECTOR 3 1 BASE 2 EMITTER 3 2 mAdc 1 DEVICE MARKING AND RESISTOR VALUES Device DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 Marking 8A 8B 8C 8D 8F 8H 8J 8K 8L 8M R1 (K) 10 22 47 10 4.7 2.2 4.7 4.7 22 2.2 R2 (K) 10 22 47 47 ∞ 2.2 4.7 47 47 47 Shipping 3000/Tape & Reel CASE 463 SOT–416/SC–75 STYLE 1 © Semiconductor Components Industries, LLC, 2000 1 May, 2000 – Rev. 0 Publication Order Number: DTC114EET1/D DTC114EET1 SERIES THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR–4 Board (1.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (1.) Total Device Dissipation, FR–4 Board (2.) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (2.) Junction and Storage Temperature Range Symbol PD 200 1.6 RθJA PD 300 2.4 RθJA TJ, Tstg 400 –55 to +150 mW mW/°C °C/W °C 600 mW mW/°C °C/W Max Unit ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Base Cutoff Current (VCB = 50 V, IE = 0) Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter–Base Cutoff Current (VEB = 6.0 V, IC = 0) DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 ICBO ICEO IEBO — — — — — — — — — — — — 50 50 — — — — — — — — — — — — — — 100 500 0.5 0.2 0.1 0.2 1.9 2.3 1.5 0.18 0.13 0.2 — — nAdc nAdc mAdc Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector–Emitter Breakdown Voltage (3.) (IC = 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS (3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 hFE 35 60 80 80 160 8.0 15 80 80 80 — 60 100 140 140 350 15 30 200 150 140 — — — — — — — — — — — 0.25 Vdc Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTC123EET1 (IC = 10 mA, IB = 1 mA) DTC143TET1 DTC143ZET1/DTC124XET1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) DTC114EET1 DTC124EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC144EET1 VCE(sat) VOL — — — — — — — — — — — — — — — — — — — — 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 × 1.0 Inch Pad 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% http://onsemi.com 2 DTC114EET1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) DTC143TET1 DTC143ZET1 Input Resistor DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC114EET1/DTC124EET1/DTC144EET1 DTC114YET1 DTC143TET1 DTC123EET1/DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 250 PD , POWER DISSIPATION (MILLIWATTS) Symbol VOH Min 4.9 Typ — Max — Unit Vdc R1 7.0 15.4 32.9 7.0 3.3 1.5 3.3 3.3 15.4 1.54 0.8 0.17 — 0.8 0.055 0.38 0.038 10 22 47 10 4.7 2.2 4.7 4.7 22 2.2 1.0 0.21 — 1.0 0.1 0.47 0.047 13 28.6 61.1 13 6.1 2.9 6.1 6.1 28.6 2.86 1.2 0.25 — 1.2 0.185 0.56 0.056 kΩ Resistor Ratio R1/R2 200 150 100 50 RθJA = 600°C/W 0 – 50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 0.1 Figure 2. Normalized Thermal Response http://onsemi.com 3 DTC114EET1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — DTC114EET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = –25°C 25°C 0.1 75°C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C –25°C 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = –25°C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 5. Output Capacitance Figure 6. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = –25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 7. Input Voltage versus Output Current http://onsemi.com 4 DTC114EET1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — DTC124EET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 25°C 0.1 TA = –25°C 75°C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75°C 25°C –25°C 100 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 8. VCE(sat) versus IC Figure 9. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 75°C 25°C TA = –25°C Cob , CAPACITANCE (pF) 3 10 1 2 0.1 1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 10. Output Capacitance Figure 11. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = –25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 12. Input Voltage versus Output Current http://onsemi.com 5 DTC114EET1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — DTC144EET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C –25°C 100 1 25°C 75°C TA = –25°C 0.1 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 13. VCE(sat) versus IC Figure 14. DC Current Gain 1 f = 1 MHz IE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = –25°C 0.8 Cob , CAPACITANCE (pF) 0.6 1 0.4 0.1 0.2 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 15. Output Capacitance Figure 16. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = –25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 17. Input Voltage versus Output Current http://onsemi.com 6 DTC114EET1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — DTC114YET1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = –25°C 25°C 0.1 75°C 300 VCE = 10 250 25°C 200 –25°C 150 100 50 0 TA = 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 Figure 18. VCE(sat) versus IC Figure 19. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C IC, COLLECTOR CURRENT (mA) 25°C –25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 20. Output Capacitance Figure 21. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = –25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 22. Input Voltage versus Output Current http://onsemi.com 7 DTC114EET1 SERIES TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM µP OR OTHER LOGIC Figure 23. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 24. Open Collector Inverter: Inverts the Input Signal Figure 25. Inexpensive, Unregulated Current Source http://onsemi.com 8 DTC114EET1 SERIES MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.5 min. (3x) TYPICAL SOLDERING PATTERN Unit: mm 0.5 min. (3x) 1.4 SOT–416/SC–75 POWER DISSIPATION The power dissipation of the SOT–416/SC–75 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the